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參數(shù)資料
| 型號： | AS5C512K8F-25 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT |
| 中文描述： | 為512k × 8的SRAM高速SRAM和革命引腳排列 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 416K |
| 代理商： | AS5C512K8F-25 |
SRAM
AS5C512K8
Austin Semiconductor, Inc.
AS5C512K8
Rev. 4.5 7/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
MECHANICAL DEFINITIONS*
ASI Case #307 (Package Designator F)
SMD 5962-95600, Case Outline T
Bottom View
36
1
c
E2
A
Q
MIN
0.096
0.015
0.003
0.910
0.840
0.505
0.385
MAX
0.125
0.022
0.009
0.930
0.860
0.515
0.397
A
b
c
D
D1
E
E2
e
L
Q
0.250
0.020
0.370
0.045
SYMBOL
0.050 BSC
SMD SPECIFICATIONS
*All measurements are in inches.
D
e
b
Top View
D1
S
E
L
12345678
12345678
12345678
12345678
12345678
12345678
12345678
12345678
Pin 1 identifier area
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS5C512K8ECJ-30 | 512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT |
| AS6VA5128 | 2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM |
| AS6VA5128-BC | 2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM |
| AS6VA5128-BI | 2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM |
| AS6VA5128 | 2.7V to 3.3V 512K × 8 Intelliwatt low-power CMOS SRAM(2.7V 到 3.3V 512K × 8 Intelliwatt 低功耗 CMOS 靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS5C512K8F-25/883 | 制造商:Micross Components 功能描述:SRAM, 4MB - Trays |
| AS5C512K8F-25/883C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT |
| AS5C512K8F-25/H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT |
| AS5C512K8F-25/IT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| AS5C512K8F-25/XT | 制造商:Micross Components, Inc. 功能描述:SRAM, 4MB - Trays |
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