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參數(shù)資料
| 型號(hào)： | AS5LC512K8F-20L/IT |
| 廠商： | MICROSS COMPONENTS |
| 元件分類： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 20 ns, CDFP36 |
| 封裝： | CERAMIC, FLATPACK-36 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 191K |
| 代理商： | AS5LC512K8F-20L/IT |
SRAM
AS5LC512K8
AS5LC512K8
Rev. 2.2 01/10
Micross Components reserves the right to change products or specications without notice.
1
FEATURES
Ultra High Speed Asynchronous Operation
Fully Static, No Clocks
Multiple center power and ground pins for improved
noise immunity
Easy memory expansion with CE\ and OE\
options
All inputs and outputs are TTL-compatible
Single +3.3V Power Supply +/- 0.3V
Data Retention Functionality Testing
Cost Efcient Plastic Packaging
Extended Testing Over -55C to +125C for plastics
OPTIONS
MARKING
Timing
12ns access
-12
15ns access
-15
20ns access
-20
25ns access
-25
Operating Temperature Ranges
Military (-55oC to +125oC) XT
Industrial (-40oC to +85oC) IT
Package(s)
Ceramic Flatpack
F
No. 307
Plastic SOJ (400 mils wide)
DJ
Ceramic LCC
EC
No. 210
2V data retention/low power
L
PIN ASSIGNMENT
(Top View)
36-Pin PSOJ (DJ)
36-Pin CLCC (EC)
GENERAL DESCRIPTION
The AS5LC512K8 is a 3.3V high speed SRAM. It offers ex-
ibility in high-speed memory applications, with chip enable (CE\) and
output enable (OE\) capabilities. These features can place the outputs
in High-Z for additional exibility in system design.
Writing to these devices is accomplished when write enable (WE\)
and CE\ inputs are both LOW. Reading is accomplished when WE\
remains HIGH and CE\ and OE\ go LOW.
As a option, the device can be supplied offering a reduced power
standby mode, allowing system designers to meet low standby power
requirements. This device operates from a single +3.3V power supply
and all inputs and outputs are fully TTL-compatible.
The AS5LC512K8DJ offers the convenience and reliability of
the AS5LC512K8 SRAM and has the cost advantage of a plastic
encapsulation.
36-Pin Flat Pack (F)
AVAILABLE AS MILITARY
SPECIFICATIONS
MIL-STD-883 for Ceramic
Extended Temperature Plastic (COTS)
512K x 8 SRAM
3.3 VOLT HIGH SPEED SRAM with
CENTER POWER PINOUT
For more products and information
please visit our web site at
www.micross.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS5LC512K8F-25L/883C | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT |
| AS5LC512K8F-25L/IT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT |
| AS5LC512K8F-25L/XT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT |
| AS5R100J | 功能描述:線繞電阻器 - 透孔 .1 OHM 5% 5W RoHS:否 制造商:Bourns 電阻:10 Ohms 容差:5 % 功率額定值:7 W 溫度系數(shù):200 PPM / C 系列:FW 端接類型:Axial 工作溫度范圍:- 55 C to + 155 C 尺寸:9.5 mm Dia. x 26 mm L 封裝:Ammo 產(chǎn)品:Power Resistors Wirewound High Energy |
| AS5R100JLF | 制造商:TT Electronics / IRC 功能描述:AS5R100JLF |
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