- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄362444 > AS5SS128K36DQ-11XT x36 Fast Synchronous SRAM PDF資料下載
參數(shù)資料
| 型號： | AS5SS128K36DQ-11XT |
| 英文描述： | x36 Fast Synchronous SRAM |
| 中文描述： | x36快速同步SRAM |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 224K |
| 代理商： | AS5SS128K36DQ-11XT |
SRAM
AS5SS128K36
Austin Semiconductor, Inc.
AS5SS128K36
Rev. 2.0 12/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
Supply Relative to V
SS
.................-0.5V to +4.6V
Voltage on V
DD
Q Supply Relative to V
SS
.................-0.5V to V
DD
V
IN
.................................................................. -0.5V to V
DD
Q +0.5V
Storage Temperature (Plastics) ..........................-55
°
C to +150
°
C
Short Circuit Output Current ........................…..................100mA
Max. Junction Temperature*.............................................+150
°
C
*Stresses greater than those listed under "Absolute Maximum Rat-
ings" may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operation section of this speci-
fication is not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect reliability.
**Junction Temperature depends upon package type, cycle time, load-
ing, ambient temperture and airflow.
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(-55
o
C < T
A
< +125
o
C; V
DD,
V
DD
Q = +3.3V +0.165V unless otherwise noted)
DESCRIPTION
CONDITIONS
Input High (Logic 1) Voltage
NOTE:
1.
2.
All voltages referenced to V
SS
(GND).
Overshoot: V
IH
< +4.6V for t < t
KHKH
/2 for I < 20mA.
Undershoot: V
IL
< -0.7V for t < t
KHKH
/2 for I < 20mA.
Power-up: V
< +3.465V and V
< 3.135V for t < 200ms.
MODE pin has an internal pull-up, and input leakage = + 10
μ
A.
The load used for V
, V
OL
testing is shown in Figure 2. AC load current is higher than the shown DC values. AC I/O curvers
are available upon request.
V
Q should never exceed V
DD
. V
DD
and V
DD
Q should be externally wired together to the same power supply.
This parameter is sampled.
3.
4.
5.
6.
SYMBOL
V
IH
MIN
2.0
MAX
UNITS
V
NOTES
1, 2
V
DD
+ 0.3
Input High (Logic 1) Voltage
DQ Pins
V
IH
2.0
V
DD
+ 0.3
V
1, 2
Input Low (Logic 0) Voltage
V
IL
-0.3
0.8
V
1, 2
Input Leakage Current
0V < V
IN
< V
DD
Output(s) Disabled,
0V < V
IN
< V
DD
IL
I
-1.0
1.0
μ
A
3
Output Leakage Current
IL
O
-1.0
1.0
μ
A
Output High Voltage
I
OH
= -4.0mA
V
OH
2.4
---
V
1, 4
Output Low Voltage
I
OL
= 8.0mA
V
OL
---
0.4
V
1, 4
Supply Voltage
V
DD
3.135
3.465
V
1
Isolated Output Buffer Supply
V
DD
Q
3.135
V
DD
V
1, 5
CAPACITANCE
DESCRIPTION
Control Input Capacitance
CONDITIONS
SYMBOL
C
I
TYP
3
MAX
4
UNITS
pF
NOTES
6
Input/Output Capacitance (DQ)
C
O
4
5
pF
6
Address Capacitance
C
A
3
3.5
pF
6
Clock Capacitance
C
CK
3
3.5
pF
6
T
A
= 25
o
C; f = 1 MHz
V
DD
= 3.3V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS5SS128K36DQ-12IT | x36 Fast Synchronous SRAM |
| AS5SS128K36DQ-12XT | x36 Fast Synchronous SRAM |
| AS5SS128K36DQ-15 | x36 Fast Synchronous SRAM |
| AS5SS128K36DQ-9 | x36 Fast Synchronous SRAM |
| AS5SS256K18 | 256K x 18 SSRAM Synchronous Burst SRAM. Flow-Through |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS5SS128K36DQ-12/IT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT |
| AS5SS128K36DQ-12/XT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT |
| AS5SS128K36DQ-12IT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM |
| AS5SS128K36DQ-12XT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM |
| AS5SS128K36DQ-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。