參數(shù)資料
型號(hào)： AS5SS128K36DQ-15
英文描述： x36 Fast Synchronous SRAM
中文描述： x36快速同步SRAM
文件頁(yè)數(shù)： 9/16頁(yè)
文件大小： 224K
代理商： AS5SS128K36DQ-15
SRAM
AS5SS128K36
Austin Semiconductor, Inc.
AS5SS128K36
Rev. 2.0 12/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
DESCRIPTION
CONDITIONS
SYM
-11
-12
UNITS NOTES
Power Supply
Current: Operating
Device selected; All inputs < V
IL
or > V
IH
; Cycle time > t
KC
(MIN)
V
DD
= MAX; Outputs open
I
DD
275
250
mA
1, 2
Power Supply
Current: Idle
Device selected; V
DD
= MAX;
CKE\ > V
IH
;
All inputs < V
SS
+ 0.2 or > V
DD
-0.2;
Cycle time > t
KC
(MIN)
I
DD1
22
20
mA
1, 2
CMOS Standby
Device selected; V
DD
= MAX;
All inputs < V
SS
+ 0.2 or > V
DD
-0.2;
All inputs static; CLK frequency = 0
I
SB2
10
10
mA
2
TTL Standby
Device selected; V
DD
= MAX;
All inputs < V
IL
or > V
IH
;
All inputs static; CLK frequency = 0
I
SB3
25
25
mA
2
Clock Running
Device selected; V
DD
= MAX;
ADV/LD\ > V
IH
; All inputs < V
SS
+ 0.2
or > V
DD
- 0.2; Cycle time > t
KC
(MIN)
I
SB4
65
60
mA
2
Snooze Mode
ZZ > V
IH
I
SB2Z
10
10
mA
2
MAX
I
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
(-55
o
C < T
A
< +125
o
C; V
DD,
V
DD
Q = +3.3V +0.165V unless otherwise noted)
THERMAL RESISTANCE
DESCRIPTION
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Top of Case)
CONDITIONS
SYM
TYP
UNITS
NOTES
θ
JA
46
o
C/W
3
θ
JC
2.8
o
C/W
3
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/JESD51
NOTE:
1.
I
DD
is specified with no output current and increases with faster cycle times. I
DD
Q increases with faster cycle times and
greater output loading.
“Device deselected” means device is in a deselected cycle as defined in the truth table. “Device selected” means device
is active (not in deselected mode).
This parameter is sampled.
2.
3.
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