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參數(shù)資料
| 型號： | AS5SS256K18 |
| 英文描述： | 256K x 18 SSRAM Synchronous Burst SRAM. Flow-Through |
| 中文描述： | 256 × 18的SSRAM同步突發(fā)靜態(tài)存儲器。流通過 |
| 文件頁數(shù)： | 4/16頁 |
| 文件大小： | 224K |
| 代理商： | AS5SS256K18 |
SRAM
AS5SS128K36
Austin Semiconductor, Inc.
AS5SS128K36
Rev. 2.0 12/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
First Address
(external)
X...X00
X...X01
X...X10
X...X11
Second Address
(internal)
X...X01
X...X00
X...X11
X...X10
Third Address
(internal)
X...X10
X...X11
X...X00
X...X01
Fourth Address
(internal)
X...X11
X...X10
X...X01
X...X00
First Address
(external)
X...X00
X...X01
X...X10
X...X11
Second Address
(internal)
X...X01
X...X10
X...X11
X...X00
Third Address
(internal)
X...X10
X...X11
X...X00
X...X01
Fourth Address
(internal)
X...X11
X...X00
X...X01
X...X10
INTERLEAVED BURST ADDRESS TABLE (MODE = NC OR HIGH)
LINEAR BURST ADDRESS TABLE (MODE = LOW)
PARTIAL TRUTH TABLE FOR READ/WRITE COMMANDS*
FUNCTION
R/W\
READ
H
BWa\
X
BWb\
X
BWc\
X
BWd\
X
Write Abort/NOP
L
H
H
H
H
Write Byte a (DQa, DQPa)
2
Write Byte b (DQb, DQPb)
2
Write Byte c (DQc, DQPc)
2
Write Byte d (DQd, DQPd)
2
Write all bytes
L
L
H
H
H
L
H
L
H
H
L
H
H
L
H
L
H
H
H
L
L
L
L
L
L
*
NOTE:
Using R/W\ and byte write(s), any one or more bytes may be written.
相關PDF資料 |
PDF描述 |
|---|---|
| AS5SS256K18DB-10 | x18 Fast Synchronous SRAM |
| AS5SS256K18DB-8 | x18 Fast Synchronous SRAM |
| AS5SS256K18DB-9 | x18 Fast Synchronous SRAM |
| AS5SS256K18DQ-10 | x18 Fast Synchronous SRAM |
| AS5SS256K18DQ-8 | x18 Fast Synchronous SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AS5SS256K18_05 | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through |
| AS5SS256K18DB-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Fast Synchronous SRAM |
| AS5SS256K18DB-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Fast Synchronous SRAM |
| AS5SS256K18DB-9 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Fast Synchronous SRAM |
| AS5SS256K18DQ-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Fast Synchronous SRAM |
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