- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄362444 > AS5SS256K36 9216Kbits 256K x 36 Replacement with DSCC 5962-n/a | SSRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | AS5SS256K36 |
| 英文描述： | 9216Kbits 256K x 36 Replacement with DSCC 5962-n/a | SSRAM |
| 中文描述： | 9216Kbits 256K × 36置換籍局5962氮/ 1 |的SSRAM |
| 文件頁(yè)數(shù)： | 9/16頁(yè) |
| 文件大?。?/td> | 224K |
| 代理商： | AS5SS256K36 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)當(dāng)前第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)
SRAM
AS5SS128K36
Austin Semiconductor, Inc.
AS5SS128K36
Rev. 2.0 12/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
DESCRIPTION
CONDITIONS
SYM
-11
-12
UNITS NOTES
Power Supply
Current: Operating
Device selected; All inputs < V
IL
or > V
IH
; Cycle time > t
KC
(MIN)
V
DD
= MAX; Outputs open
I
DD
275
250
mA
1, 2
Power Supply
Current: Idle
Device selected; V
DD
= MAX;
CKE\ > V
IH
;
All inputs < V
SS
+ 0.2 or > V
DD
-0.2;
Cycle time > t
KC
(MIN)
I
DD1
22
20
mA
1, 2
CMOS Standby
Device selected; V
DD
= MAX;
All inputs < V
SS
+ 0.2 or > V
DD
-0.2;
All inputs static; CLK frequency = 0
I
SB2
10
10
mA
2
TTL Standby
Device selected; V
DD
= MAX;
All inputs < V
IL
or > V
IH
;
All inputs static; CLK frequency = 0
I
SB3
25
25
mA
2
Clock Running
Device selected; V
DD
= MAX;
ADV/LD\ > V
IH
; All inputs < V
SS
+ 0.2
or > V
DD
- 0.2; Cycle time > t
KC
(MIN)
I
SB4
65
60
mA
2
Snooze Mode
ZZ > V
IH
I
SB2Z
10
10
mA
2
MAX
I
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
(-55
o
C < T
A
< +125
o
C; V
DD,
V
DD
Q = +3.3V +0.165V unless otherwise noted)
THERMAL RESISTANCE
DESCRIPTION
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Top of Case)
CONDITIONS
SYM
TYP
UNITS
NOTES
θ
JA
46
o
C/W
3
θ
JC
2.8
o
C/W
3
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/JESD51
NOTE:
1.
I
DD
is specified with no output current and increases with faster cycle times. I
DD
Q increases with faster cycle times and
greater output loading.
“Device deselected” means device is in a deselected cycle as defined in the truth table. “Device selected” means device
is active (not in deselected mode).
This parameter is sampled.
2.
3.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS5SS256K36A | 256K x 36 SSRAM Flow-Through. Synchronous Burst SRAM |
| AS5SS128K36 | 128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT |
| AS5SS128K36DQ-10 | x36 Fast Synchronous SRAM |
| AS5SS128K36DQ-11 | x36 Fast Synchronous SRAM |
| AS5SS128K36DQ-11IT | x36 Fast Synchronous SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS5SS256K36_05 | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM |
| AS5SS256K36A | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM |
| AS5SS256K36ADQ-10/883C | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM |
| AS5SS256K36ADQ-10/IT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM |
| AS5SS256K36ADQ-10/XT | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。