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參數(shù)資料
| 型號： | AS6UA25617 |
| 英文描述： | 1.65V to 3.6V 256K x 16 Intelliwatt low power CMOS SRAM with two chip enables |
| 中文描述： | 1.65V至3.6V的256K × 16 Intelliwatt低功耗CMOS SRAM的兩個芯片，使 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 216K |
| 代理商： | AS6UA25617 |
AS6UA25617
7/14/00
ALLIANCE SEMICONDUCTOR
3
Recommended operating condition (over the operating range)
Parameter
Description
Capacitance (f = 1 MHz, T
a
= Room temperature, V
CC
= NOMINAL)2
Parameter
Symbol
Input capacitance
C
IN
I/O capacitance
C
I/O
Test Conditions
Min
2.4
2.0
1.5
Max
Unit
V
OH
Output HIGH Voltage
I
OH
= 2.1mA
I
OH
= 1.5mA
I
OH
= 1.65mA
I
OL
= 2.1mA
I
OL
= 0.5mA
I
OL
= 0.1mA
V
CC
= 2.7V
V
CC
= 2.3V
V
CC
= 1.65V
V
CC
= 2.7V
V
CC
= 2.3V
V
CC
= 1.65V
V
CC
= 2.7V
V
CC
= 2.3V
V
CC
= 1.65V
V
CC
= 2.7V
V
CC
= 2.3V
V
CC
= 1.65V
V
V
OL
Output LOW Voltage
0.4
0.4
0.2
V
V
IH
Input HIGH Voltage
2.2
2.0
1.4
–0.5
–0.3
–0.3
–1
–1
V
CC
+ 0.5
V
CC
+ 0.3
V
CC
+ 0.3
0.8
0.6
0.4
+1
+1
2
1
1
2
1
1
40/30/20
30/25/15
25/20/12
V
V
IL
Input LOW Voltage
V
I
IX
I
OZ
Input Load Current
Output Load Current
GND < V
IN
< V
CC
GND < V
O
< V
CC
; Outputs High Z
CS1 = V
IL
, V
IN
= V
IL
or V
IH
, I
OUT
= 0mA,
f = 0
μ
A
μ
A
I
CC
V
CC
Operating Supply
Current
V
CC
= 3.6V
V
CC
= 2.7V
V
CC
= 2.3V
V
CC
= 3.6V
V
CC
= 2.7V
V
CC
= 2.3V
mA
I
CC1
@
1 MHz
Average V
CC
Operating
Supply Current at 1 MHz
CS1
≤
0.2V, V
IN
≤
0.2V or V
IN
≥
V
CC
–
0.2V f = 1mS
mA
I
CC2
Average V
CC
Operating
Supply Current
CS1
≤
V
IL
, V
IN
= V
IL
,
or V
IH
, f = f
Max
V
CC
= 3.6V (55/70/100 ns)
V
CC
= 2.7V (55/70/100 ns)
V
CC
= 2.3V (55/70/100 ns)
V
CC
= 3.6V
V
CC
= 2.7V
V
CC
= 2.3V
mA
I
SB
CS1, CS2 Power Down
Current; TTL inputs
CS1
≥
V
IH
, CS2 = V
IH
,
or UB = LB
≥
V
IH
,
other inputs = V
IL
or
V
IH
, f = 0
CS1 > V
CC
– 0.2V, CS2
= + 0.2V, or UB = LB
> V
CC
– 0.2V, other
input = 0V – V
CC
,
f = f
Max
CS1 > V
CC
– 0.1V, CS2
< + 0.1V, or UB =
LB = V
CC
– 0.1V, f = 0
100
μ
A
I
SB1
CS1, CS2 Power Down
Current; CMOS Inputs
V
CC
= 3.6V
20
μ
A
V
CC
= 2.7V
15
V
CC
= 2.3V
12
I
SBDR
Data Retention
V
CC
= 1.2V
2
μ
A
Signals
Test conditions
V
IN
= 0V
V
IN
= V
OUT
= 0V
Max
5
7
Unit
pF
pF
A, CS1, CS2, WE, OE, LB, UB
I/O
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PDF描述 |
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| AS6UA51216 | 1.65V to 3.6V 512K x 16 Intelliwatt low power CMOS SRAM with one chip enable |
| AS6VA2516-TC | x16 SRAM |
| AS6VA2516-BC | x16 SRAM |
| AS6WA5128 | 3.0V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS6UA51216 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:1.65V to 3.6V 512K】16 Intelliwatt low power CMOS SRAM with one chip enable |
| AS6UA51216-BC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:1.65V to 3.6V 512K】16 Intelliwatt low power CMOS SRAM with one chip enable |
| AS6UA51216-BI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:1.65V to 3.6V 512K】16 Intelliwatt low power CMOS SRAM with one chip enable |
| AS6UA51216-TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:1.65V to 3.6V 512K】16 Intelliwatt low power CMOS SRAM with one chip enable |
| AS6UA51216-TI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:1.65V to 3.6V 512K】16 Intelliwatt low power CMOS SRAM with one chip enable |
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