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參數(shù)資料
| 型號(hào)： | AS6WA5128 |
| 英文描述： | 3.0V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM |
| 中文描述： | 3.0V至3.6V為512k × 8 Intelliwatt低功耗CMOS SRAM的 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大小： | 152K |
| 代理商： | AS6WA5128 |
AS6WA5128
10/6/00
ALLIANCE SEMICONDUCTOR
3
Recommended operating condition (over the operating range)
Parameter
Description
V
OH
Output HIGH Voltage
V
OL
Output LOW Voltage
V
IH
Input HIGH Voltage
V
IL
Input LOW Voltage
I
IX
Input Load Current
I
OZ
Output Load Current
Capacitance (f = 1 MHz, T
a
= Room temperature, V
CC
= NOMINAL)
2
Parameter
Symbol
Test Conditions
Min
2.4
Max
Unit
V
I
OH
= –2.1mA
I
OL
= 2.1mA
V
CC
= 3.0V
V
CC
= 3.0V
V
CC
= 3.0V
V
CC
= 3.0V
0.4
V
2.2
–0.5
V
CC
+ 0.5
0.8
V
V
μ
A
μ
A
GND < V
IN
< V
CC
GND < V
O
< V
CC
; Outputs High Z
–1
+1
–1
+1
I
CC
V
CC
Operating Supply
Current
CS = V
IL
,
I
OUT
= 0mA, f = 0,
V
IN
= V
IL
or V
IH
V
CC
= 3.6V
2
mA
I
CC1
@
1 MHz
Average V
CC
Operating
Supply Current at 1
MHz
CS < 0.2V, V
IN
<
0.2V,
or V
IN
> V
CC
– 0.2V,
f = 1 mS
V
CC
= 3.6V
5
mA
I
CC2
Average V
CC
Operating
Supply Current
CS
≠
V
IL
, V
IN
= V
IL
or V
IH
, f = f
Max
V
CC
= 3.6V (55 ns)
40
mA
I
SB
CS Power Down
Current; TTL Inputs
CS > V
IH
, other inputs
= 0V – V
CC
V
CC
= 3.6V
100
μ
A
I
SB1
CS Power Down
Current; CMOS Inputs
CS > V
CC
– 0.2V,
other inputs = 0V –
V
CC
, f = f
Max
V
CC
= 3.6V
20
μ
A
I
SBDR
Data Retention
CS > V
CC
– 0.1V,
f = 0
V
CC
= 1.2V
2
μ
A
Signals
Test conditions
Max
Unit
Input capacitance
C
IN
C
I/O
A,
CS
,
WE
,
OE
V
IN
= 0V
V
IN
= V
OUT
= 0V
5
pF
I/O capacitance
I/O
7
pF
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PDF描述 |
|---|---|
| AS6WA5128-BC | x8 SRAM |
| AS6WA5128-BI | x8 SRAM |
| AS6WA5128-HFC | x8 SRAM |
| AS6WA5128-HFI | x8 SRAM |
| AS6WA5128-HRC | x8 SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS6WA5128-BC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| AS6WA5128-BI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| AS6WA5128-HFC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| AS6WA5128-HFI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| AS6WA5128-HRC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
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