參數(shù)資料
型號: AS8E128K32P-200/883C
廠商: AUSTIN SEMICONDUCTOR INC
元件分類: PROM
英文描述: 128K x 32 EEPROM Memory Array
中文描述: 128K X 32 EEPROM 5V MODULE, 200 ns, CPGA66
封裝: 1.075 INCH, PGA-66
文件頁數(shù): 11/13頁
文件大?。?/td> 281K
代理商: AS8E128K32P-200/883C
EEPROM
AS8E128K32
AS8E128K32
Rev. 7.6 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
Austin Semiconductor, Inc.
PAGE MODE WRITE WAVEFORMS(1,2)
NOTES: 1. A7 through A16 must specify the page address during each high to low transition of WE\ (or CE\).
2. OE\ must be high only when WE\ and CE\ are both low.
3. VD - Valid Data
4. VA - Valid Address
PAGE MODE CHARACTERISTICS
Symbol
Parameter
Min
Max
Unit
tAS, tOES
Address, OE\ Set-Up time
4
ns
tAH
Address, Hold time
50
ns
tCS
Chip Select Set-up Time
0
ns
tCH
Chip Select Hold Time
0
ns
tWP
Write Pulse Width (WE\ or CE\)
100
ns
tDS
Data Set-up Time
50
ns
tDH, tOEH
Data, OE\ Hold Time
10
ns
CHIP ERASE WAVEFORMS
t
S
= 5 msec (min.)
t
W
= tH = 10 msec (min.)
V
H
= 12.0V + 0.5V
VIH
VIL
VH
VIH
VIL
CE\
OE\
WE\
t
W
t
S
t
H
tWC
tDH
tDS
tAH
tAS
tBLC
tWPH
tWP
BYTE 0
BYTE 1
BYTE 2
BYTE 3
BYTE127
BYTE 126
VA
VD
VA
VD
OE
CE\
WE\
A0 - A16
DATA
t
WP
t
AH
t
AS
t
DS
t
DH
t
WPH
t
BLC
t
WC
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