參數(shù)資料
型號: AS8ER128K32Q-200/XT
廠商: AUSTIN SEMICONDUCTOR INC
元件分類: PROM
英文描述: 128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY
中文描述: 128K X 32 EEPROM 5V MODULE, 200 ns, CQFP68
封裝: 0.880 INCH, 0.200 INCH HIEGHT, CERAMIC, QFP-68
文件頁數(shù): 17/18頁
文件大小: 550K
代理商: AS8ER128K32Q-200/XT
EEPROM
AS8ER128K32
AS8ER128K32
Rev. 5.3 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
Austin Semiconductor, Inc.
DATA POLLING TIMING WAVEFORM
An
Din X
Dout X
t
OE
(7)
t
WC
t
OEH
t
CE
(7)
t
OES
t
DW
Address
CE\
WE\
OE\
I\O7
NOTES:
1. t
DF and tDFR are defined as the time at which the outputs achieve the open circuit conditions and are no longer driven.
2. Use this device in longer cycle than this value.
3. t
WC must be longer than this value unless polling techniques or RDY/Busy\ are used.
This device automatically com-
pletes the internal write operation within this value.
4. Next read or write operation can be initiated after t
DW if polling techniques or RDY/Busy\ are used.
5. This parameter is sampled and not 100% tested.
6. A7 to A16 are page addresses and must be same within the page write operation.
7. See AC read characteristics.
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