參數(shù)資料
型號(hào): AS8F128K32Q-150/883C
廠商: AUSTIN SEMICONDUCTOR INC
元件分類: PROM
英文描述: 128K x 32 FLASH FLASH MEMORY ARRAY
中文描述: 128K X 32 FLASH 5V PROM MODULE, 150 ns, CQFP68
封裝: CERAMIC, QFP-68
文件頁(yè)數(shù): 8/22頁(yè)
文件大?。?/td> 1260K
代理商: AS8F128K32Q-150/883C
FLASH
AS8F128K32
AS8F128K32
Rev. 2.7 09/07
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
16
Austin Semiconductor, Inc.
FIGURE 12: Toggle Bit Timings (During Embedded Algorithms)
NOTES: VA = Valid address; not required for I/O6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
AC CHARACTERISTICS: Erase and Program Operations, Alternate CEx\
Controlled Writes
JEDEC Standard
Write Cycle Time
1
tAVAV
tWC
Min
60
7090120 150
ns
Address Setup Time
tAVEL
tAS
Min
ns
Address Hold Time
tELAX
tAH
Min
45
45 45
50
ns
Data Setup Time
tDVEH
tDS
Min
30
30 45
50
ns
Data Hold Time
tEHDX
tDH
Min
ns
Output Enable Setup Time
1
tOES
Min
ns
Read Recover Time Before Write
tGHEL
Min
ns
WEx\ Setup Time
tEHWH
tWS
Min
ns
WEx\ Hold Time
tEHWH
tWH
Min
ns
CEx\ Pulse Width
tELEH
tCP
Min
30
35 45
50
ns
CEx\ Pulse Width High
tEHEL
tCPH
Min
ns
Byte Programming Operation
2
tWHWH1 tWHWH1
TYP
s
Chip/Sector Erase Operation
2
tWHWH2 tWHWH2
TYP
sec
1.0
0
20
14
0
UNIT
-70 -90 -120 -150
SYMBOL
PARAMETER
-60
DESCRIPTION
NOTES:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
*applies to every 8th byte.
相關(guān)PDF資料
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AS8F128K32Q-150/IT 128K x 32 FLASH FLASH MEMORY ARRAY
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