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參數(shù)資料
| 型號： | AS8F1M32QT-90/Q |
| 廠商： | AUSTIN SEMICONDUCTOR INC |
| 元件分類： | PROM |
| 英文描述： | 1M X 32 FLASH 5V PROM MODULE, 90 ns, CQFP68 |
| 封裝： | 0.140 INCH HEIGHT, CERAMIC, QFP-68 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 275K |
| 代理商： | AS8F1M32QT-90/Q |
AUSTIN SEMICONDUCTOR, INC.
FLASH
AS8F1M32
AS8F1M32
Rev. 1.5 09/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(V
CC
= 5.0V, -55°C < T
A
< +125°C)
MIN
MAX
MIN
MAX
MIN
MAX
Write Cycle Time
tAVAV
tWC
90
120
150
ns
Chip Select Setup Time
tELWL
tCS
00
0
ns
Write Enable Pulse Width
tWLWH
tWP
45
50
ns
Address Setup Time
tAVWL
tAS
00
0
ns
Data Setup Time
tDVWH
tDS
45
50
ns
Data Hold Time
tWHDX
tDH
00
0
ns
Address Hold Time
tWLAX
tAH
45
50
ns
Write Enable Pulse Width High
tWHWL
tWPH
20
ns
Duration of Byte Progreamming Operation
1 t
WHWH1
300
s
Sector Erase
2
tWHWH2
8
sec
Read Recovery Time before Write
tGHWL
00
0
s
VCC Setup Time
tVCS
50
s
Chip Programming Time
3
44
sec
Chip Erase Time
4
256
sec
Output Enable Hold Time
5
tOEH
10
ns
RESET\ Pulse Width
tRP
500
ns
Read Cycle Time
tAVAV
tRC
90
120
150
ns
Address Access Time
tAVQV
tACC
90
120
150
ns
Chip Select Access Time
tELQV
tCE
90
120
150
ns
Output Enable to Output Valid
tGLQV
tOE
40
50
55
ns
Chip Select High to Output High
6
tEHQZ
tDF
20
30
35
ns
Output Enable High to Output High
6
tGHQZ
tDF
20
30
35
ns
Output Hold from Adresses, CS\ or
OE\ Change, whichever is First
tAXQX
tOH
00
0
ns
RST Low to Read Mode
6
tReady
20
s
Write Cycle Time
tAVAV
tWC
90
120
150
ns
Write Enable Setup Time
tWLEL
tWS
00
0
ns
Chip Select Pulse Width
tELEH
tCP
45
50
ns
Address Setup Time
tAVEL
tAS
00
0
ns
Data Setup Time
tDVEH
tDS
45
50
ns
Data Hold Time
tEHDX
tDH
00
0
ns
Address Hold Time
tELAX
tAH
45
50
ns
Chip Select Pulse Width High
tEHEL
tCPH
20
ns
Duration of Byte Progreamming Operation
1 t
WHWH1
300
s
Sector Erase Time
2
tWHWH2
8
sec
Read Recovery Time
tGHEL
00
0
s
Chip Programming Time
44
sec
Chip Erase Time
4
256
sec
Output Enable Hold Time
5
tOEH
10
ns
CS\ CONTROLLED (WRITE/ERASE/PROGRAM OPERATIONS)
UNITS
WE\ CONTROLLED (WRITE/ERASE/PROGRAM OPERATIONS)
READ-ONLY OPERATIONS
SYM
-90
-120
-150
PARAMETER
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