參數(shù)資料
型號: ASD501V
廠商: 美麗微半導體有限公司
英文描述: ER 10C 10#16 SKT RECP
中文描述: 表面貼裝小信號類型
文件頁數(shù): 1/2頁
文件大?。?/td> 76K
代理商: ASD501V
Advanced Schottky Barrier Diodes
ASD501V
Surface mount small signal type
Extermely thin package
Low stored charge
Majority carrier conduction
Mechanical data
Case : Molded plastic, 0805
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.000159 ounce, 0.0045 gram
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Repetitive peak reverse voltage
V
RM
45
V
Continuous reverse voltage
V
R
40
V
Mean rectifying current
I
O
100
mA
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
1000
mA
Capacitance between terminals
f=1MHz and applied 10VDC reverse voltage
C
T
20
pF
Storage temperature
T
J
-40
+125
o
C
Operating temperature
T
STG
-40
+125
o
C
ELECTRICAL CHARACTERISTICS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 100 mA DC
V
F
0.55
V
Reverse current
V
R
= 10 V DC
I
R
30
uA
0805
0.087 (2.2)
0.071 (1.8)
0.012(0.3) Typ.
0.055 (1.4)
0.039 (1.0)
0.043 (1.1)
0.028 (0.7)
R0.3 (0.012) Typ.
Formosa MS
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參數(shù)描述
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