參數(shù)資料
型號: ASDL-4772-C41
廠商: LITE-ON ELECTRONICS INC
元件分類: 紅外LED
中文描述: 1.6 mm, 1 ELEMENT, INFRARED LED, 940 nm
文件頁數(shù): 1/4頁
文件大?。?/td> 195K
代理商: ASDL-4772-C41
ASDL-4772
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
Data Sheet
Description
ASDL-4772 is a high performance Infrared emitter that is
optimized for high efficiency at emission wavelength of
940nm. It is designed for applications that require small
outline dimensions with high radiant intensity and low
forward voltage at wide viewing angle. The emitter is en-
capsulated in Side Look package and is matched to ASDL-
6771 for maximum sensitivity.
Features
Side Look Package
940nm wavelength
Narrow Viewing Angle
Good Mechanical and Spectral matching to ASDL-6771
Infrared Phototransistor Detector
Lead Free and ROHS Compliant
Available in Tape & Reel
Applications
Industrial Infrared Monitoring Applications
Consumer Electronics (Optical Mouse)
Infrared Source for Optical Counters and Card Readers
Photo-Interrupters
On-Off Switch / Beam Interruption
Positioning Sensing
相關(guān)PDF資料
PDF描述
ASDL-4772-C22
ASDL-4860-C22
ASE2-FREQ-L-H CRYSTAL OSCILLATOR, CLOCK, 0.625 MHz - 166 MHz, CMOS/TTL OUTPUT
ASE2-FREQ-L-R-T CRYSTAL OSCILLATOR, CLOCK, 0.625 MHz - 166 MHz, CMOS/TTL OUTPUT
ASE3-0.625MHZ-B-T CRYSTAL OSCILLATOR, CLOCK, 0.625 MHz, CMOS OUTPUT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ASDL-4860 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:High Power Infrared Emitter (850nm) in Surface Mount Package
ASDL-4860-C22 功能描述:紅外發(fā)射源 Infrared 850nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
ASDL-5270 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:High-Performance Photodiode in T-1 Package
ASDL-5270-D22 功能描述:光電二極管 PIN Photodiode 60 Degrees RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強(qiáng)度角度:50 deg 封裝 / 箱體:TO-5
ASDL-5270-D31 功能描述:光電二極管 PIN Photodiode 60 Degrees RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強(qiáng)度角度:50 deg 封裝 / 箱體:TO-5