參數(shù)資料
型號(hào): ASMT-MWK0-GKY
元件分類: LED
英文描述: SINGLE COLOR LED, COOL WHITE
封裝: ROHS COMPLIANT PACKAGE-2
文件頁(yè)數(shù): 8/11頁(yè)
文件大?。?/td> 490K
代理商: ASMT-MWK0-GKY
6
0
50
100
150
200
250
300
350
400
0
10
20
30
40
50
60
70
80
90
TA AMBIENT TEMPERATURE - °C
I F
MA
XFORW
ARD
CURRENT
-
mA
0
50
100
150
200
250
300
350
400
0
10
20
30
40
50
60
70
80
90
450
460
470
480
490
500
510
520
530
540
100
150
200
250
300
350
400
FORWARD CURRENT - mA
DOMINANT
W
AVELENGTH
-nm
Green
Blue
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
0
50 100 150 200 250 300 350 400 450 500
MONO PULSE CURRENT - mA
REL
ATIVE
LUMINOUS
FL
UX
(Φv)
-lm
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-90
-70
-50
-30
-10
10
30
50
70
90
OFF-AXIS ANGLE (°)
REL
ATIVE
INTENSIT
Y
GREEN
BLUE
COOL WHITE
WARM WHITE
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
380
430
480
530
580
630
680
730
780
WAVELENGTH - nm
REL
ATIVE
INTENSIT
Y
GREEN
BLUE
COOL WHITE
WARM WHITE
0
50
100
150
200
250
300
350
400
450
500
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
FORWARD VOLTAGE - V
FORW
ARD
CURRENT
-mA
RJA = 30°C/W
RJA = 40°C/W
RJA = 50°C/W
Figure 7. Relative Intensity vs. Wavelength for InGaN
Figure 8. Forward Current vs Forward Voltage for InGaN
Figure 9. Relative Luminous Flux vs. Mono Pulse Current for InGaN
Figure 10. Radiation Pattern for InGaN
Figure 11. Maximum forward current vs. ambient temperature for InGaN
Figure 12. Dominant wavelength vs. forward current – InGaN devices
Derated based on TJMAX = 110°C, RθJA = 30°C/W / 40°C/W and 50°C/W
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