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參數(shù)資料
| 型號： | AT-30533-TR1 |
| 英文描述： | Low Current, High Performance NPN Silicon Bipolar Transistor |
| 中文描述： | 低電流，高性能NPN硅雙極晶體管 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 101K |
| 代理商： | AT-30533-TR1 |
4-24
AT-30511, AT-30533 Absolute Maximum Ratings
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2] [3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°
C
°
C
Absolute Maximum
[1]
1.5
11
5.5
8
100
150
-65 to 150
Notes:
1. Operation of this device above any one of these parameters may cause permanent
damage.
2. T
= 25
°
C.
3. Derate at 1.82 mW/
°
C for T
C
> 95
°
C.
Thermal Resistance
[2]
:
θ
jc
= 550
°
C/W
Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a
Compromise Match Between Best Noise Figure, Best Gain, Stability, a Practical,
Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and
AT-310 Geometries.
1000 pF
V
BB
W = 10 L = 1860
W = 10 L = 1000
W = 30 L = 100
W = 30 L = 100
W = 10 L = 1860
1000 pF
V
CC
25
W = 10 L = 1025
TEST CIRCUIT A: W = 20 L = 100
TEST CIRCUIT B: W = 20 L = 200 x 2
NOT TO SCALE
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (
ε
= 4.8)
DIMENSIONS IN MILS
Electrical Specifications, T
A
= 25
°
C
AT-30511
Typ
AT-30533
Typ
Symbol
Parameters and Test Conditions
Units
Min
Max
Min
Max
NF
Noise Figure
V
CE
= 2.7 V, I
C
= 1 mA
Associated Gain
V
CE
= 2.7 V, I
C
= 1 mA
Forward Current
Transfer Ratio
Collector Cutoff Current
Emitter Cutoff Current
f = 0.9 GHz
dB
1.1
[1]
1.4
[1]
1.1
[2]
1.4
[2]
G
A
f = 0.9 GHz
V
CE
= 2.7 V
I
C
= 1 mA
V
CB
= 3 V
V
EB
= 1 V
dB
-
14
[1]
70
16
[1]
11
[2]
70
13
[2]
h
FE
300
300
I
CBO
I
EBO
μ
A
μ
A
0.03
0.1
0.2
1.5
0.03
0.1
0.2
1.5
Notes:
1. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Input loss = 0.4 dB; output loss = 0.4 dB.
2. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Input loss = 0.4 dB; output loss = 0.4 dB.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-30533-TR1G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-30533-TR2G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT305AC | 制造商:MCM 功能描述:CHARGER AND CHARGER CABLE |
| AT305SEAC | 制造商:Toshiba America Electronic Components 功能描述:AC ADAPTER |
| AT-306 | 制造商:HRS 制造商全稱:HRS 功能描述:Fixed Attenuators (SMA Type) |
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