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參數(shù)資料
| 型號： | AT-31033-BLK |
| 英文描述： | TERM BLOCK HDR 5.08MM 3POS PCB |
| 中文描述： | 低電流，高性能NPN硅雙極晶體管 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 137K |
| 代理商： | AT-31033-BLK |
4-33
Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
Description
Hewlett-Packard’s AT-31011 and
AT-31033 are high performance
NPN bipolar transistors that have
been optimized for operation at
low voltages, making them ideal
for use in battery powered
applications in wireless markets.
The AT-31033 uses the 3 lead
SOT-23, while the AT-31011 places
the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standards
compatible with high volume
surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a mul-
tiplicity of tasks. The 10 emitter
finger interdigitated geometry
yields an extremely fast transistor
with low operating currents and
reasonable impedances.
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.9 GHz, and 2.4 GHz
Features
High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
900 MHz Performance:
AT-31011: 0.9 dB NF, 13 dB G
A
AT-31033: 0.9 dB NF, 11 dB G
A
Characterized for End-Of-
Life Battery Use (2.7 V)
SOT-143 SMT Plastic
Package
Tape-And-Reel Packaging
Option Available
[1]
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Applications
include cellular and PCS handsets
as well as Industrial-Scientific-
Medical systems. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 11 dB or more
associated gain at a 2.7 V, 1 mA
bias. Moderate output power
capability (+9 dBm P
1dB
) coupled
with an excellent noise figure
yields high dynamic range for a
microcurrent device. High gain
capability at 1 V, 1 mA makes these
devices a good fit for 900 MHz
pager applications.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett-Packard’s
10 GHz f
T
, 30 GHz f
max
Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
AT-31011
AT-31033
BASE
EMITTER
EMITTER COLLECTOR
BASE
EMITTER
COLLECTOR
310
310
SOT-23 (AT-31033)
SOT-143 (AT-31011)
Outline Drawing
Note:
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices”
5965-8919E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-31011 | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-31011-BLK | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-31011-TR1 | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-31033 | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-31033-TR1 | Low Current, High Performance NPN Silicon Bipolar Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-31033-BLKG | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-31033-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-31033-TR1G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-31033-TR2G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT310-38/42-4 | 制造商:Block 功能描述:3 phase autotransformer,380-400V 10kVA |
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