- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄362463 > AT-32011-TR1 Low Current, High Performance NPN Silicon Bipolar Transistor PDF資料下載
參數(shù)資料
| 型號： | AT-32011-TR1 |
| 英文描述： | Low Current, High Performance NPN Silicon Bipolar Transistor |
| 中文描述： | 低電流，高性能NPN硅雙極晶體管 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 125K |
| 代理商： | AT-32011-TR1 |
4-55
Characterization Information, T
A
= 25
°
C
AT-32011
Typ.
AT-32033
Typ.
Symbol
P
1dB
Parameters and Test Conditions
Power at 1 dB Gain Compression (opt tuning)
V
CE
= 2.7 V, I
C
= 20 mA
Gain at 1 dB Gain Compression (opt tuning)
V
CE
= 2.7 V, I
C
= 20 mA
Output Third Order Intercept Point (opt tuning)
V
CE
= 2.7 V, I
C
= 20 mA
Gain in 50
System
V
CE
= 2.7 V, I
C
= 2 mA
Units
f = 0.9 GHz
dBm
13
13
G
1dB
f = 0.9 GHz
dB
16.5
15
IP
3
f = 0.9 GHz
dBm
24
24
|S
21
|
E
2
f = 0.9 GHz
dB
13
11.5
N
0
0
FREQUENCY (GHz)
1
1.5
2
1
0.5
0.5
2.5
1.5
2
1 mA
2 mA
5 mA
10 mA
20 mA
G
0
0
FREQUENCY (GHz)
1.0
1.5
25
10
5
0.5
2.5
15
2.0
20
1 mA
2 mA
5 mA
10 mA
20 mA
G
0
0
FREQUENCY (GHz)
1.0
1.5
10
5
0.5
2.5
15
2.0
20
1 mA
2 mA
5 mA
10 mA
20 mA
Figure 4. AT-32033 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
CE
= 2.7 V.
Figure 2. AT-32011 and AT-32033
Minimum Noise Figure vs. Frequency
and Current at V
CE
= 2.7 V.
Figure 3. AT-32011 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
CE
= 2.7 V.
Figure 6. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 2.7 V.
Figure 5. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at V
CE
= 2.7 V.
Figure 7. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 2.7 V.
P
0
-5
FREQUENCY (GHz)
1.0
1.5
20
5
0
0.5
2.5
10
2.0
15
2 mA
5 mA
10 mA
20 mA
G
0
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
G
0
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-32033 | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-32033-TR1 | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-32063-BLK | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-32063-TR1 | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-32063 | Low Current, High Performance NPN Silicon Bipolar Transistor(小電流，高性能NPN硅雙極型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-32011-TR1G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-32011-TR2G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT320240Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:李守華 15889415469 |
| AT-320240Q1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AT-320240Q1 320 X 240 DOTS 1/240 DUTY |
| AT-320240Q5FIQW | 制造商:ZETTLER 制造商全稱:ZETTLER Electronics 功能描述:SPECIFICATIONS FOR LCD MODULE |
發(fā)布緊急采購，3分鐘左右您將得到回復。