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參數(shù)資料
| 型號： | AT-32011-TR2G |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 279K |
| 代理商： | AT-32011-TR2G |
2
AT-32011, AT-32033 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
11
VCEO
Collector-Emitter Voltage
V
5.5
IC
Collector Current
mA
32
PT
Power Dissipation[2, 3]
mW
200
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Electrical Specifications, TA = 25°C
AT-32011
AT-32033
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
NF
Noise Figure
VCE = 2.7 V, IC = 2 mA
f = 0.9 GHz
dB
1.0[1]
1.3[1]
1.0[2]
1.3[2]
GA
Associated Gain
VCE = 2.7 V, IC = 2 mA
f = 0.9 GHz
dB
12.5[1]
14[1]
11[2]
12.5[2]
hFE
Forward Current Transfer Ratio
VCE = 2.7 V, IC = 2 mA
–
70
300
70
300
ICBO
Collector Cutoff Current
VCB = 3 V
A
0.2
IEBO
Emitter Cutoff Current
VEB = 1 V
A
1.5
Notes:
1. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
2. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
Thermal Resistance[2]:
θjc = 550 °C/W
Notes:
1. Operation of this device above any one
of these parameters may cause permanent
damage.
2. TMounting Surface = 25°C.
3. Derate at 1.82 mW/°C for TC > 40°C.
AT-32011 fig 1
1000 pF
VBB
W = 10 L = 1870
W = 10
CKT A: L = 380
CKT B: L = 380
W = 30
L = 60
W = 10 L = 1870
1000 pF
VCC
W = 10
CKT A: L = 105
CKT B: L = 850
CKT A: W = 30 L = 50 x 2
CKT B: W = 30 L = 60
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (
ε = 4.8)
RF IN
W = 30
L = 60
CKT A: 25
CKT B: 5
RF OUT
NOT TO SCALE
DIMENSIONS IN MILS
Figure 1. Test Circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain, stability, and a practical synthesizable match.
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