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參數(shù)資料
| 型號(hào)： | AT-32033-TR1G |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大小： | 279K |
| 代理商： | AT-32033-TR1G |
4
AT-32011 fig 15
Ga
(dBm
)
-50
0
TEMPERATURE (°C)
50
25
10
5
0
100
15
20
0
2.5
1.0
0.5
1.5
2.0
NOISE
FIGURE
(dB)
Ga
NF
AT-31011 fig 14
Ga
(dBm
)
-50
0
TEMPERATURE (°C)
50
25
10
5
0
100
15
20
0
2.5
1.0
0.5
1.5
2.0
NOISE
FIGURE
(dB)
Ga
NF
AT-32011 fig 16
IP3
(dBm
)
0
FREQUENCY (MHz)
1.0
1.5
25
10
5
0.5
2.5
15
2.0
20
2 mA
5 mA
10 mA
20 mA
Figure 14. AT-32011 Noise Figure and Associated Gain
at VCE = 2.7 V, IC = 2 mA vs. Temperature in Test Circuit,
Figure 1. (Circuit Losses De-embedded).
Figure 15. AT-32033 Noise Figure and Associated Gain
at VCE = 2.7 V, IC = 2 mA vs. Temperature in Test Circuit,
Figure 1. (Circuit Losses De-embedded).
Figure 16. AT-32011 and AT-32033 Third Order In-
tercept vs. Frequency and Bias at VCE = 2.7 V, with
Optimal Tuning.
AT-32011 fig 11
P
1dB
(dBm
)
0
-5
FREQUENCY (GHz)
1.0
1.5
10
0
-2.5
0.5
2.5
2.0
7.5
2 mA
5 mA
5
AT-32011 fig 12
G
1dB
(dB)
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
AT-32011 fig 13
G
1dB
(dB)
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
Figure 11. AT-32011 and AT-32033 Power at 1 dB Gain
Compression vs. Frequency and Current at VCE = 1 V.
Figure 12. AT-32011 1 dB Compressed Gain vs. Fre-
quency and Current at VCE = 1 V.
Figure 13. AT-32033 1 dB Compressed Gain vs. Fre-
quency and Current at VCE = 1 V.
Figure 8. AT-32011 and AT-32033 Power at 1 dB Gain
Compression vs. Frequency and Current at VCE = 5 V.
Figure 9. AT-32011 1 dB Compressed Gain vs. Frequen-
cy and Current at VCE = 5 V.
Figure 10. AT-32033 1 dB Compressed Gain vs. Fre-
quency and Current at VCE = 5 V.
AT-32011 fig 8
P
1dB
(dBm
)
0
-5
FREQUENCY (GHz)
1.0
1.5
20
5
0
0.5
2.5
10
2.0
15
2 mA
5 mA
10 mA
20 mA
AT-32011 fig 9
G
1dB
(dB)
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
AT-32011 fig 10
G
1dB
(dB)
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
AT-32011, AT-32033 Typical Performance
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-32033-TR1 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32011-BLK | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32033-BLK | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32011-TR1 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41410 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-32033-TR2G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT32063 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:???d???A??????NPN?g?????W?X?^ ?c?C???E?^?C?vSOT-363?p?b?P?[?W |
| AT-32063 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-32063-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-32063-BLKG | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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