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參數(shù)資料
| 型號(hào)： | AT-32063-TR1 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-70, 6 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | AT-32063-TR1 |
AT-32063
Low Current, High Performance NPN
Silicon Bipolar Transistor
Data Sheet
Features
High Performance Bipolar Transistor Optimized for Low
Current, Low Voltage Operation
900 MHz Performance: 1.1 dB NF, 14.5 dB GA
Characterized for End-of-Life Battery Use (2.7 V)
SOT-363 (SC-70) Plastic Package
Tape-and-Reel Packaging Option Available
Lead-free Option Available
Description
The AT-32063 contains two high performance NPN
bipolar transistors in a single SOT-363 package. The
devices are unconnected, allowing flexibility in design.
The pin-out is convenient for cascode amplifier designs.
The SOT-363 package is an industry standard plastic
surface mount package.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of the transistor yields extremely high
performance products that can perform a multiplicity
of tasks. The 20 emitter finger interdigitated geometry
yields a transistor that is easy to match to and extremely
fast, with moderate power, low noise resistance, and
low operating currents.
Optimized performance at 2.7 V makes this device ideal
for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery
operated systems as an LNA, gain stage, buffer, oscilla-
tor, or active mixer. Typical amplifier designs at 900
MHz yield 1.3 dB noise figures with 12 dB or more
associated gain at a 2.7 V, 5 mA bias, with noise perfor-
mance being relatively insensitive to input match. High
gain capability at 1 V, 1 mA makes this device a good fit
for 900 MHz pager applications. Voltage breakdowns
are high enough for use at 5 volts.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz ft , 30 GHz fmax
Self-Aligned-Transistor (SAT) process. The die are
nitride passivated for surface protection. Excellent
device uniformity, performance and reliability are pro-
duced by the use of ion-implantation, self-alignment
techniques, and gold metallization in the fabrication of
these devices.
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and Package Marking
B1
1
E1
2
C2
3
C1
6
E2
5
B2
4
I I
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-32063-TR1G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-32063-TR2G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT3210 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AT3210 - 16 GrayScales 160x160 STN Controller |
| AT3216 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Multilayer Chip Antenna |
| AT3216-B2R7HAAB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Multilayer Chip Antenna |
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