參數(shù)資料
型號: AT-332
英文描述: Voltage Variable Absorptive Attenuator DC - 2 GHz
中文描述: 變壓吸附衰減直流- 2吉赫
文件頁數(shù): 1/2頁
文件大?。?/td> 114K
代理商: AT-332
V 2.00
Guaranteed Specifications
1
(From -55°C to + 85°C)
Frequency Range
Insertion Loss
DC – 2.0 GHz
1.5 dB Max
1.2 dB Max
DC – 2.0 GHz
DC – 1.0 GHz
VSWR
AT-332
1.4:1
1.25:1
AT-337
1.5:1 Max
1.3:1 Max
40 dB Min
DC – 2.0 GHz
DC – 1.0 GHz
DC – 2.0 GHz
Attenuation
(Matched) @ 25°C
Flatness
(Peak to Peak)
0-20 dB Attenuation
0-30 dB Attenuation
0-40 dB Attenuation
0 to 20 dB Attenuation
0 to 30 dB Attenuation
0 to 40 dB Attenuation
1.0 dB Max
2.0 dB Max
3.0 dB Max
±2.5 dB
±4.0 dB
±6.0 dB
Attenuation vs
Temperature
(Relative to 25°C)
Operating Characteristics
Impedance
Switching Characteristics
Trise, Tfall (10% to 90%)
Ton, Toff (50% CTL to 90%/10% RF)
Transients (in band)
Input Power for 1 dB Compression
Attenuation Level
0.05 GHz
0.5 GHz to 2.0 GHz
Intermodulation Intercept Point (for two-tone input power up to +5 dBm)
Intercept Points
Attenuation Level (dB) 0 5 10 0 5 10
0.05 GHz
54 43 39
0.5 to 2 GHz
65 54 49
Phase Shift
(Relative to 0 dB Attenuation)
Attenuation Level
10 dB
0.5 GHz
0.1
2.0 GHz
0.4
Control Voltages
A input (Shunt FETS)
B input (Series FETS)
50 Ohms Nominal
14 ns Typ
22 ns Typ
14 mV Typ
0 dB
21
27
dBm Typ
IP2
IP3
39 33 30
47 44 38
dBm Typ
dBm Typ
20 dB
3
12
30 dB
10
35
40 dB
19
60
Deg Typ
Deg Typ
0 to -4V @ 100 μA Max
0 to -4V @ 100 μA Max
1. All specifications apply with 50 ohm connected to all RF Ports.
2. Contact the factory for standard or custom sreenig requirements.
Voltage Variable Absorptive Attenuator
DC - 2 GHz
AT-332, AT-337
Features
Available in Ceramic and TO-5 packages
40 dB Matched Attenuation
Low Insertion Loss
AT-332 (TO-5-4)
AT-337 (CR-2 w/o Pin 1)
Ordering Information
Model No.
Package
AT-354 PIN
Dual Inline
相關PDF資料
PDF描述
AT332 Voltage Variable Absorptive Attenuator DC2 GHz
AT-337 Voltage Variable Absorptive Attenuator DC2 GHz
AT-38043 NPN Silicon Bipolar Common Emitter Transistor (118K in pdf)
AT-38043 Silicon Power Transistors(硅功率型晶體管)
AT-41435 Up to 6 GHz Low Noise Silicon Bipolar Transistor(高達6 GHz低噪聲硅雙極型晶體管)
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