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參數(shù)資料
| 型號(hào)： | AT-41470 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, MICROSTRIP PACKAGE-4 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 118K |
| 代理商： | AT-41470 |
Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Technical Data
Features
Low Noise Figure:
1.6 dB Typical at 2.0 GHz
3.0 dB Typical at 4.0 GHz
High Associated Gain:
14.5 dB Typical at 2.0 GHz
10.5 dB Typical at 4.0 GHz
High Gain-Bandwidth
Product:
8.0 GHz Typical fT
Hermetic, Gold-ceramic
Microstrip Package
AT-41470
70 mil Package
Description
Hewlett-Packard’s AT-41470 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41470 is housed in a hermetic,
high reliability gold-ceramic 70 mil
microstrip package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
This device is designed for use in
low noise, wideband amplifier,
mixer and oscillator applications
in the VHF, UHF, and microwave
frequencies. An optimum noise
match near 50
at 1 GHz , makes
this device easy to use as a low
noise amplifier.
The AT-41470 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
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