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參數(shù)資料
| 型號： | AT-41470 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, MICROSTRIP PACKAGE-4 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 118K |
| 代理商： | AT-41470 |
2
AT-41470 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
20
VCEO
Collector-Emitter Voltage
V
12
IC
Collector Current
mA
60
PT
Power Dissipation [2,3]
mW
500
Tj
Junction Temperature
°C
200
TSTG
Storage Temperature
°C
-65 to 200
Thermal Resistance [2,4]:
θ
jc = 175°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE = 25°C.
3. Derate at 5.7 mW/
°C for T
C > 113°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of
θ
jc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
|S21E|
2
Insertion Power Gain; VCE = 8 V, IC = 25 mA
f = 2.0 GHz
dB
12.0
f = 4.0 GHz
6.5
P1 dB
Power Output @ 1 dB Gain Compression
f = 2.0 GHz
dBm
19.0
VCE = 8 V, IC = 25 mA
f = 4.0 GHz
18.5
G1 dB
1 dB Compressed Gain; VCE = 8 V, IC = 25 mA
f = 2.0 GHz
dB
15.0
f = 4.0 GHz
10.5
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
f = 1.0 GHz
dB
1.3
f = 2.0 GHz
1.6
1.9
f = 4.0 GHz
3.0
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 1.0 GHz
dB
18.5
f = 2.0 GHz
13.0
14.5
f = 4.0 GHz
10.5
fT
Gain Bandwidth Product: VCE = 8 V, IC = 25 mA
GHz
8.0
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA
—
30
150
300
ICBO
Collector Cutoff Current; VCB = 8 V
A
0.2
IEBO
Emitter Cutoff Current; VEB = 1 V
A
1.0
CCB
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
pF
0.2
Note:
1. For this test, the emitter is grounded.
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