參數(shù)資料
型號: AT-41535G
元件分類: 小信號晶體管
英文描述: S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件頁數(shù): 2/5頁
文件大?。?/td> 133K
代理商: AT-41535G
2
Table 1. Absolute Maximum Ratings [1] at Tc = +25°C
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T—CASE = 25°C
3. Derate at 8 mW/°C for Tc>87.5°C.
4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit.
5. Thermal Resistance is measured using IR Microscopy method.
Table 2. Electrical Specifications at Tc = +25°C, VCE=8V
Notes:
1. For this test, the emitter is grounded.
Symbol
Parameter
Unit
Max Rating
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
20
VCEO
Collector-Emitter Voltage
V
12
IC
Collector Current
mA
60
PT
Power Dissipation[2]
mW
500
Tj
Junction Temperature
°C
150
Tstg
Storage Temperature
°C
-60 to 150
qjc
Thermal Resistance[5]
°C/W
125
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
|S21E|2
Insertion Power Gain; VCE=8V, Ic=25mA
f = 2.0 GHz
f = 4.0 GHz
dB
11.0
5.5
P1dB
Power Output @1dB Gain Compression:
VCE=8V, Ic=25 mA
f = 2.0 GHz
f = 4.0 GHz
dBm
19.0
18.5
G1dB
1 dB Compressed Gain:
VCE=8V, Ic=25 mA
f = 2.0 GHz
f = 4.0 GHz
dB
14.0
9.0
NFo
Optimum Noise Figure:
VCE=8V, Ic = 10 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
dB
1.30
1.70
3.00
2.0
GA
Gain @ NFo ;
VCE=8V, Ic=10mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
dB
13.0
18.0
14.0
10.0
fT
Gain Bandwidth Product: Ic = 25 mA
GHz
8.0
hFE
Forward Current Transfer Ratio:
VCE=8V, Ic = 10 mA
-
30
180
270
ICBO
Collector Cutoff Current: VCB = 8 V
uA
0.2
IEBO
Emitter Cutoff Current: VEB = 1 V
uA
1.0
CcBO
Collector Base Capacitance[1]:
VCB=8V,F=1MHz
pF
0.20
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