- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄48376 > AT-42010 (AGILENT TECHNOLOGIES INC) C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | AT-42010 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, MICROSTRIP PACKAGE-4 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 52K |
| 代理商： | AT-42010 |
4-157
AT-42010 Typical Scattering Parameters, Common Emitter,
ZO = 50 ,TA =25°C, VCE =8 V,IC = 10mA
Freq.
S11
S21
S12
S22
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
0.1
.74
-47
28.5
26.65
153
-36.4
.015
72
.91
-18
0.5
.65
-136
21.4
11.71
103
-29.4
.034
38
.51
-39
1.0
.63
-168
15.9
6.24
82
-27.2
.044
36
.40
-42
1.5
.63
174
12.6
4.26
69
-26.0
.050
42
.38
-45
2.0
.63
161
10.1
3.23
57
-24.6
.059
43
.38
-49
2.5
.64
154
8.4
2.64
51
-23.0
.070
52
.38
-51
3.0
.65
145
6.9
2.22
41
-22.0
.080
54
.37
-56
3.5
.66
136
5.8
1.94
31
-21.0
.090
51
.38
-65
4.0
.66
126
4.7
1.72
21
-19.7
.104
50
.39
-74
4.5
.66
115
3.8
1.55
11
-18.0
.126
45
.40
-82
5.0
.66
103
3.0
1.41
1
-17.3
.136
41
.40
-89
5.5
.68
90
2.1
1.28
-9
-16.1
.156
36
.40
-98
6.0
.72
81
1.3
1.16
-19
-15.4
.170
31
.37
-110
AT-42010 Typical Scattering Parameters,
Common Emitter, ZO = 50 , TA =25°C, VCE =8 V,IC = 35mA
Freq.
S11
S21
S12
S22
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
0.1
.54
-90
33.3
45.97
138
-39.2
.011
54
.76
-29
0.5
.62
-163
22.8
13.83
94
-33.2
.022
52
.34
-40
1.0
.62
177
17.0
7.10
78
-28.8
.036
59
.30
-40
1.5
.62
166
13.6
4.82
67
-26.2
.049
61
.29
-42
2.0
.62
155
11.3
3.65
56
-23.8
.065
57
.29
-47
2.5
.63
150
9.5
2.99
51
-21.8
.081
62
.29
-50
3.0
.64
142
8.0
2.52
42
-21.0
.090
63
.30
-57
3.5
.65
133
6.8
2.19
32
-19.7
.103
59
.30
-67
4.0
.65
124
5.7
1.93
22
-18.4
.120
54
.31
-76
4.5
.65
113
4.7
1.72
13
-17.2
.138
49
.33
-85
5.0
.66
102
3.9
1.56
3
-16.6
.148
45
.34
-92
5.5
.69
91
3.0
1.41
-6
-15.6
.166
39
.33
-100
6.0
.73
83
2.1
1.27
-16
-14.9
.180
32
.30
-110
A model for this device is available in the DEVICE MODELS section.
AT-42010 Noise Parameters: VCE = 8 V, IC = 10 mA
Freq.
NFO
Γ
opt
GHz
dB
Mag
Ang
RN/50
0.1
1.0
.04
15
0.13
0.5
1.1
.05
76
0.12
1.0
1.5
.10
132
0.12
2.0
1.9
.23
-177
0.11
4.0
3.0
.45
-125
0.26
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-42010G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42070 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42070G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42086-TR1 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42086-TR1G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT42035 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | MICRO-X |
| AT-42035 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42035-BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42035G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-42035-TR1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。