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參數(shù)資料
| 型號： | AT-42085G |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 156K |
| 代理商： | AT-42085G |
AT-42085 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
0
VCEO
Collector-Emitter Voltage
V
1
IC
Collector Current
mA
80
PT
Power Dissipation [,3]
mW
500
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Thermal Resistance[2,4]:
θjc = 130°C/W
Notes:
1. Permanent damage may occur if any of
theselimitsareexceeded.
2. Tcase=25°C.
3. Derateat7.7mW/°CforTc>85°C.
4. See MEASUREMENTS section “Thermal
Resistance”formoreinformation.
|S1E|
Insertion Power Gain; VCE = 8V, IC = 35 mA
f = 1.0 GHz
dB
15.5
17.0
f = .0 GHz
11.0
f = 4.0 GHz
5.0
P1dB
Power Output @ 1 dB Gain Compression
f = .0 GHz
dBm
0.5
VCE = 8V, IC = 35 mA
f= 4.0 GHz
0.0
G1dB
1 dB Compressed Gain; VCE = 8V, IC = 35 mA
f = .0 GHz
dB
14.0
f = 4.0 GHz
9.5
NFO
Optimum Noise Figure: VCE = 8V, IC = 10 mA
f = .0 GHz
dB
.0
f = 4.0 GHz
3.5
GA
Gain @ NFO;VCE = 8V, IC = 10 mA
f = .0 GHz
dB
13.5
f = 4.0 GHz
9.5
fT
Gain Bandwidth Product: VCE = 8V, IC = 35 mA
GHz
8.0
hFE
Forward Current Transfer Ratio; VCE = 8V, IC = 35 mA
—
30
150
70
ICBO
Collector Cutoff Current; VCB = 8V
A
0.
IEBO
Emitter Cutoff Current; VEB = 1V
A
.0
CCB
Collector Base Capacitance[1]: VCB = 8V, f = 1 MHz
pF
0.3
Note:
1. Forthistest,theemitterisgrounded.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AT42086 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | FO-163 |
| AT-42086 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42086-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42086-BLKG | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-42086-BLKG | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
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