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參數(shù)資料
| 型號： | AT-64020 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 64K |
| 代理商： | AT-64020 |
3
Typical Scattering Parameters, Common Emitter, Z
O = 50
, T
A =25
°C, V
CE = 16 V, IC = 110 mA
Freq.
S11
S21
S12
S22
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
0.1
.61
-116
30.0
31.51
130
-33.1
.022
57
.67
-48
0.5
.75
-173
18.4
8.27
86
-28.8
.036
41
.23
-88
1.0
.75
171
12.5
4.23
66
-27.4
.043
49
.20
-100
1.5
.74
159
9.2
2.90
50
-23.5
.067
48
.21
-110
2.0
.74
148
7.0
2.23
35
-21.6
.083
46
.25
-120
2.5
.73
141
5.2
1.82
26
-19.8
.103
47
.27
-127
3.0
.73
130
3.8
1.56
12
-17.5
.133
41
.32
-135
3.5
.74
119
2.7
1.37
-2
-16.1
.157
35
.35
-146
4.0
.73
107
1.8
1.23
-16
-14.7
.186
26
.38
-158
4.5
.72
93
0.9
1.11
-30
-13.3
.217
18
.41
-168
5.0
.71
79
0.1
1.01
-43
-11.8
.256
8
.42
179
A model for this device is available in the DEVICE MODELS section.
AT-64020 Typical Performance, T
A = 25
°C
FREQUENCY (GHz)
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VCE = 16 V, IC = 110 mA.
GAIN
(dB)
0.1
0.5
0.3
1.0
3.0 5.0
FREQUENCY (GHz)
Figure 1. Power Output @ 1 dB Gain
Compression vs. Frequency and
Collector Current. VCE = 16 V.
30
29
28
27
26
25
P
1
dB
(dBm)
1.0
2.0
3.0
4.0
150 mA
70 mA
110 mA
35
30
25
20
15
10
5
0
MSG
MAG
|S21E|2
POWER IN (dBm)
Figure 3. Output Power and Efficiency
vs. Input Power.
VCE = 16 V, IC = 110 mA, f = 4.0 GHz.
POWER
OUT
(dBm)
30
25
20
15
10
5
0
40
30
20
10
0
EFFICIENCY
(%)
010
5
152025
POUT
ηT
FREQUENCY (GHz)
Figure 2. 1 dB Compressed Gain vs.
Frequency and Collector Current.
VCE = 16 V.
15
12
9
6
3
G
1
dB
(dB)
1.0
2.0
3.0
4.0
150 mA
70 mA
110 mA
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