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參數(shù)資料
| 型號： | AT202 |
| 廠商： | POSEICO SPA |
| 英文描述： | AC 2C 2#0 PIN RECP BOX |
| 中文描述： | 相位控制晶閘管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 43K |
| 代理商： | AT202 |
PHASE CONTROL THYRISTOR
AT202
Repetitive voltage up to
Mean on-state current
Surge current
800
V
635
A
6
kA
TARGET SPECIFICATION
Feb 97 - ISSUE : 03
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
150
800
V
V
RSM
Non-repetitive peak reverse voltage
150
900
V
V
DRM
Repetitive peak off-state voltage
150
800
V
I
RRM
Repetitive peak reverse current
V=VRRM
150
30
mA
I
DRM
CONDUCTING
I
T (AV)
Repetitive peak off-state current
V=VDRM
150
30
mA
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
635
A
I
T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
575
A
I
TSM
Surge on-state current
sine wave, 10 ms
150
6
kA
I2 t
I2 t
without reverse voltage
180 x1E3
A2s
V
T
On-state voltage
On-state current =
800 A
150
1.19
V
V
T(TO)
Threshold voltage
150
0.8
V
r
T
On-state slope resistance
SWITCHING
di/dt
Critical rate of rise of on-state current, min.
150
0.490
mohm
From 75% VDRM up to 450 A, gate 10V 5ohm
150
320
A/μs
dv/dt
Critical rate of rise of off-state voltage, min.
Linear ramp up to 70% of VDRM
150
500
V/μs
td
Gate controlled delay time, typical
VD=100V, gate source 10V, 10 ohm , tr=.5 μs
25
1.6
μs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/μs linear up to 75% VDRM
200
μs
Q rr
Reverse recovery charge
di/dt=-20 A/μs, I= 290 A
150
μC
I rr
Peak reverse recovery current
VR= 50 V
A
I
H
Holding current, typical
VD=5V, gate open circuit
25
300
mA
I
L
Latching current, typical
VD=5V, tp=30μs
25
700
mA
GATE
V
GT
Gate trigger voltage
VD=5V
25
3.5
V
I
GT
Gate trigger current
VD=5V
25
200
mA
V
GD
Non-trigger gate voltage, min.
VD=VDRM
150
0.25
V
V
FGM
Peak gate voltage (forward)
20
V
I
FGM
Peak gate current
8
A
V
RGM
Peak gate voltage (reverse)
5
V
P
GM
Peak gate power dissipation
Pulse width 100 μs
75
W
P
G
Average gate power dissipation
MOUNTING
R
th(j-h)
Thermal impedance, DC
1
W
Junction to heatsink, double side cooled
95
°C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
20
°C/kW
T
j
F
Operating junction temperature
Mounting force
Mass
-30 / 150
4.9 / 5.9
55
°C
kN
g
ORDERING INFORMATION : AT202 S 08
standard specification
VDRM&VRRM/100
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AT-202 | 功能描述:揚(yáng)聲器與變頻器 85 dBA 6Vpp 2100Hz RoHS:否 制造商:PUI Audio 產(chǎn)品:Speakers 類型:Electromagnetic 頻率:900 Hz to 12 kHz 聲壓級:88 dBA 阻抗:8 Ohms 功率額定值:1.2 W 形狀:Round 端接類型:Solder Pad 直徑:15 mm 長度: 寬度: 深度:4.4 mm 磁體材料:Neodymium Iron Boran (NdFeB) 圓錐體材料:Mylar |
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| AT202S08 | 制造商:POSEICO 制造商全稱:POSEICO 功能描述:PHASE CONTROL THYRISTOR |
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