參數(shù)資料
型號(hào): AT27C512R-45DC
英文描述: x8 EPROM
中文描述: x8存儲(chǔ)器
文件頁(yè)數(shù): 8/16頁(yè)
文件大?。?/td> 156K
代理商: AT27C512R-45DC
AT27C010(L)
8
Rapid Programming Algorithm
A 100
μ
s PGM pulse width is used to program. The
address is set to the first location. V
CC
is raised to 6.5V and
V
PP
is raised to 13.0V. Each address is first programmed
with one 100
μ
s PGM pulse without verification. Then a
verification / reprogramming loop is executed for each
address. In the event a byte fails to pass verification, up to
10 successive 100
μ
s pulses are applied with a verification
after each pulse. If the byte fails to verify after 10 pulses
have been applied, the part is considered failed. After the
byte verifies properly, the next address is selected until all
have been checked. V
PP
is then lowered to 5.0V and V
CC
to
5.0V. All bytes are read again and compared with the origi-
nal data to determine if the device passes or fails.
相關(guān)PDF資料
PDF描述
AT27C512R-45DI x8 EPROM
AT27C512R-45LC x8 EPROM
AT27C512R-45LI x8 EPROM
AT27C512R-55DC x8 EPROM
AT27C512R-55DI x8 EPROM
相關(guān)代理商/技術(shù)參數(shù)
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