參數(shù)資料
型號: AT27C513-25DM
英文描述: x8 EPROM
中文描述: x8存儲器
文件頁數(shù): 8/16頁
文件大小: 156K
代理商: AT27C513-25DM
AT27C010(L)
8
Rapid Programming Algorithm
A 100
μ
s PGM pulse width is used to program. The
address is set to the first location. V
CC
is raised to 6.5V and
V
PP
is raised to 13.0V. Each address is first programmed
with one 100
μ
s PGM pulse without verification. Then a
verification / reprogramming loop is executed for each
address. In the event a byte fails to pass verification, up to
10 successive 100
μ
s pulses are applied with a verification
after each pulse. If the byte fails to verify after 10 pulses
have been applied, the part is considered failed. After the
byte verifies properly, the next address is selected until all
have been checked. V
PP
is then lowered to 5.0V and V
CC
to
5.0V. All bytes are read again and compared with the origi-
nal data to determine if the device passes or fails.
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