- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄366588 > AT604 (POSEICO SPA) PHASE CONTROL THYRISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | AT604 |
| 廠商： | POSEICO SPA |
| 英文描述： | PHASE CONTROL THYRISTOR |
| 中文描述： | 相位控制晶閘管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | AT604 |
PHASE CONTROL THYRISTOR
AT604
Repetitive voltage up to
Mean on-state current
Surge current
1600
V
605
A
8.4
kA
FINAL SPECIFICATION
feb 97 - ISSUE : 03
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
1600
V
V
RSM
Non-repetitive peak reverse voltage
125
1700
V
V
DRM
Repetitive peak off-state voltage
125
1600
V
I
RRM
Repetitive peak reverse current
V=VRRM
125
50
mA
I
DRM
CONDUCTING
I
T (AV)
Repetitive peak off-state current
V=VDRM
125
50
mA
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
605
A
I
T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
530
A
I
TSM
Surge on-state current
sine wave, 10 ms
125
8.4
kA
I2 t
I2 t
without reverse voltage
353 x1E3
A2s
V
T
On-state voltage
On-state current =
1000 A
25
1.6
V
V
T(TO)
Threshold voltage
125
1.05
V
r
T
On-state slope resistance
SWITCHING
di/dt
Critical rate of rise of on-state current, min.
125
0.850
mohm
From 75% VDRM up to 660A, gate 10V 5ohm
125
200
A/μs
dv/dt
Critical rate of rise of off-state voltage, min.
Linear ramp up to 70% of VDRM
125
500
V/μs
td
Gate controlled delay time, typical
VD=100V, gate source 10V, 10 ohm , tr=.5 μs
25
1.3
μs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/μs linear up to 75% VDRM
200
μs
Q rr
Reverse recovery charge
di/dt=-20 A/μs, I= 450A
125
μC
I rr
Peak reverse recovery current
VR= 50 V
A
I
H
Holding current, typical
VD=5V, gate open circuit
25
300
mA
I
L
Latching current, typical
VD=5V, tp=30μs
25
700
mA
GATE
V
GT
Gate trigger voltage
VD=5V
25
3.5
V
I
GT
Gate trigger current
VD=5V
25
200
mA
V
GD
Non-trigger gate voltage, min.
VD=VDRM
125
0.25
V
V
FGM
Peak gate voltage (forward)
30
V
I
FGM
Peak gate current
10
A
V
RGM
Peak gate voltage (reverse)
5
V
P
GM
Peak gate power dissipation
Pulse width 100 μs
150
W
P
G
Average gate power dissipation
MOUNTING
R
th(j-h)
Thermal impedance, DC
2
W
Junction to heatsink, double side cooled
50
°C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
15
°C/kW
T
j
F
Operating junction temperature
Mounting force
Mass
-30 / 125
8.0 / 9.0
85
°C
kN
g
ORDERING INFORMATION : AT604 S 16
standard specification
VDRM&VRRM/100
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT604S16 | PHASE CONTROL THYRISTOR |
| AT607 | PHASE CONTROL THYRISTOR |
| AT607S08 | PHASE CONTROL THYRISTOR |
| AT636 | PHASE CONTROL THYRISTOR |
| AT636S18 | PHASE CONTROL THYRISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT604-14V | 功能描述:開(kāi)關(guān)配件 Incondescent Lamp 14V AC, 80mA RoHS:否 制造商:C&K Components 類(lèi)型:Cap 用于:Pushbutton Switches 設(shè)計(jì)目的: |
| AT604-28V | 功能描述:開(kāi)關(guān)配件 Incandescent 28V Lamp RoHS:否 制造商:C&K Components 類(lèi)型:Cap 用于:Pushbutton Switches 設(shè)計(jì)目的: |
| AT604-6V | 功能描述:LAMP INCAN 6V T-1 3/4 DLB SER RoHS:是 類(lèi)別:開(kāi)關(guān) >> 配件 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 其它名稱(chēng):886.0007886.0007-ND |
| AT604N | 功能描述:開(kāi)關(guān)配件 110VAC NEON LAMP RoHS:否 制造商:C&K Components 類(lèi)型:Cap 用于:Pushbutton Switches 設(shè)計(jì)目的: |
| AT604S16 | 制造商:POSEICO 制造商全稱(chēng):POSEICO 功能描述:PHASE CONTROL THYRISTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。