• <div id="a4i61"></div>
    參數(shù)資料
    型號(hào): AT87C51RD2-3CSUL
    廠商: Atmel
    文件頁(yè)數(shù): 71/84頁(yè)
    文件大?。?/td> 0K
    描述: IC 8051 MCU 64K OTP 30MHZ 40DIP
    標(biāo)準(zhǔn)包裝: 216
    系列: 87C
    核心處理器: 8051
    芯體尺寸: 8-位
    速度: 30/20MHz
    連通性: UART/USART
    外圍設(shè)備: POR,PWM,WDT
    輸入/輸出數(shù): 32
    程序存儲(chǔ)器容量: 64KB(64K x 8)
    程序存儲(chǔ)器類型: OTP
    RAM 容量: 1K x 8
    電壓 - 電源 (Vcc/Vdd): 2.7 V ~ 5.5 V
    振蕩器型: 內(nèi)部
    工作溫度: -40°C ~ 85°C
    封裝/外殼: 40-DIP(0.600",15.24mm)
    包裝: 管件
    2007-2012 Microchip Technology Inc.
    DS70292G-page 75
    dsPIC33FJ32GP302/304, dsPIC33FJ64GPX02/X04, AND dsPIC33FJ128GPX02/X04
    5.6.1
    PROGRAMMING ALGORITHM FOR
    FLASH PROGRAM MEMORY
    Programmers can program one row of program Flash
    memory at a time. To do this, it is necessary to erase
    the 8-row erase page that contains the desired row.
    The general process is:
    1.
    Read
    eight
    rows
    of
    program
    memory
    (512 instructions) and store in data RAM.
    2.
    Update the program data in RAM with the
    desired new data.
    3.
    Erase the block (see Example 5-1):
    a) Set the NVMOP bits (NVMCON<3:0>) to
    ‘0010’ to configure for block erase. Set the
    ERASE (NVMCON<6>) and WREN
    (NVMCON<14>) bits.
    b) Write the starting address of the page to be
    erased into the TBLPAG and W registers.
    c)
    Write 0x55 to NVMKEY.
    d) Write 0xAA to NVMKEY.
    e) Set the WR bit (NVMCON<15>). The erase
    cycle begins and the CPU stalls for the dura-
    tion of the erase cycle. When the erase is
    done, the WR bit is cleared automatically.
    4.
    Write the first 64 instructions from data RAM into
    the program memory buffers (see Example 5-2).
    5.
    Write the program block to Flash memory:
    a) Set the NVMOP bits to ‘0001’ to configure
    for row programming. Clear the ERASE bit
    and set the WREN bit.
    b) Write 0x55 to NVMKEY.
    c)
    Write 0xAA to NVMKEY.
    d)
    Set the WR bit. The programming cycle
    begins and the CPU stalls for the duration of
    the write cycle. When the write to Flash mem-
    ory is done, the WR bit is cleared
    automatically.
    6.
    Repeat steps 4 and 5, using the next available
    64 instructions from the block in data RAM by
    incrementing the value in TBLPAG, until all
    512 instructions are written back to Flash memory.
    For protection against accidental operations, the write
    initiate sequence for NVMKEY must be used to allow
    any erase or program operation to proceed. After the
    programming command has been executed, the user
    application must wait for the programming time until
    programming is complete. The two instructions
    following the start of the programming sequence
    should be NOPs, as shown in Example 5-3.
    EXAMPLE 5-1:
    ERASING A PROGRAM MEMORY PAGE
    ; Set up NVMCON for block erase operation
    MOV
    #0x4042, W0
    ;
    MOV
    W0, NVMCON
    ; Initialize NVMCON
    ; Init pointer to row to be ERASED
    MOV
    #tblpage(PROG_ADDR), W0
    ;
    MOV
    W0, TBLPAG
    ; Initialize PM Page Boundary SFR
    MOV
    #tbloffset(PROG_ADDR), W0
    ; Initialize in-page EA[15:0] pointer
    TBLWTL W0, [W0]
    ; Set base address of erase block
    DISI
    #5
    ; Block all interrupts with priority <7
    ; for next 5 instructions
    MOV
    #0x55, W0
    MOV
    W0, NVMKEY
    ; Write the 55 key
    MOV
    #0xAA, W1
    ;
    MOV
    W1, NVMKEY
    ; Write the AA key
    BSET
    NVMCON, #WR
    ; Start the erase sequence
    NOP
    ; Insert two NOPs after the erase
    NOP
    ; command is asserted
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    AT87C51RD2-RDTUL 功能描述:8位微控制器 -MCU C52 0.5 mX 2 OTP 3.3V RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
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