- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄352483 > AT93C56A-10SI-2.7 (ATMEL CORP) 3-wire Serial EEPROMs 2K (256 x 8 or 128 x 16) PDF資料下載
參數(shù)資料
| 型號： | AT93C56A-10SI-2.7 |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 3-wire Serial EEPROMs 2K (256 x 8 or 128 x 16) |
| 中文描述： | 128 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 0.150 INCH, PLASTIC, MS-012AA, SOIC-8 |
| 文件頁數(shù)： | 15/18頁 |
| 文件大?。?/td> | 167K |
| 代理商： | AT93C56A-10SI-2.7 |
6
3378F–SEEPR–04/04
WRITE (WRITE): The Write (WRITE) instruction contains the 8 or 16 bits of data to be
written into the specified memory location. The self-timed programming cycle tWP starts
after the last bit of data is received at serial data input pin DI. The DO pin outputs the
READY/BUSY status of the part if CS is brought high after being kept low for a minimum
of 250 ns (tCS). A logic “0” at DO indicates that programming is still in progress. A logic
“1” indicates that the memory location at the specified address has been written with the
data pattern contained in the instruction and the part is ready for further instructions. A
READY/BUSY status cannot be obtained if the CS is brought high after the end of
the self-timed programming cycle tWP.
ERASE ALL (ERAL): The Erase All (ERAL) instruction programs every bit in the mem-
ory array to the logic “1” state and is primarily used for testing purposes. The DO pin
outputs the READY/BUSY status of the part if CS is brought high after being kept low for
a minimum of 250 ns (tCS). The ERAL instruction is valid only at VCC = 5.0V ± 10%.
WRITE ALL (WRAL): The Write All (WRAL) instruction programs all memory locations
with the data patterns specified in the instruction. The DO pin outputs the READY/BUSY
status of the part if CS is brought high after being kept low for a minimum of 250 ns (tCS).
The WRAL instruction is valid only at VCC = 5.0V ± 10%.
ERASE/WRITE DISABLE (EWDS): To protect against accidental data disturb, the
Erase/Write Disable (EWDS) instruction disables all programming modes and should be
executed after all programming operations. The operation of the READ instruction is
independent of both the EWEN and EWDS instructions and can be executed at any
time.
Timing Diagrams
Synchronous Data Timing
Note:
1. This is the minimum SK period.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT93C56A-10TI-2.7 | 3-wire Serial EEPROMs 2K (256 x 8 or 128 x 16) |
| AT17LV256-10TQC | High Speed CMOS Logic 4-Bit Parallel Access Register 16-TSSOP -55 to 125 |
| AT17LV256-10TQI | FPGA Configuration EEPROM Memory |
| AT17LV256A-10CC | FPGA Configuration EEPROM Memory |
| AT17LV256A-10CI | High-Speed CMOS Logic Dual 4-Input NAND Gates 14-SOIC -55 to 125 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT93C56A-10SQ-2.7 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:3-wire Serial EEPROMs 2K (256 x 8 or 128 x 16) |
| AT93C56A-10SU-1.8 | 功能描述:電可擦除可編程只讀存儲器 E2 2K 3-WIRE 1M CYC - 10MS 1.8V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT93C56A-10SU-2.7 | 功能描述:電可擦除可編程只讀存儲器 E2 2K 3-WIRE 1M CYCLES - 10MS 2.7V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT93C56A10SU-2.7SL383 | 制造商:Atmel Corporation 功能描述:EEPROM Serial-3Wire 2K-Bit 256 x 8/128 x 16 3.3V/5V 8-Pin SOIC T/R |
| AT93C56A-10TI-1.8 | 功能描述:IC EEPROM 2KBIT 2MHZ 8TSSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。