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參數(shù)資料
| 型號： | ATA6661-TAQJ 19 |
| 廠商： | Atmel |
| 文件頁數(shù)： | 13/16頁 |
| 文件大?。?/td> | 0K |
| 描述： | TXRX LIN 2.0 3.3V/5V 8SOIC |
| 標(biāo)準(zhǔn)包裝： | 4,000 |
| 類型： | 收發(fā)器 |
| 驅(qū)動器/接收器數(shù)： | 1/1 |
| 規(guī)程： | LIN |
| 電源電壓： | 3.3V，5V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SO |
| 包裝： | 帶卷 (TR) |
6
4729M–AUTO–02/09
ATA6661
Figure 3-1.
Mode of Operation
3.14
Fail-safe Features
There are now reverse currents < 3 A at pin LIN during loss of V
BAT or GND. Optimal
behavior for bus systems where some slave nodes supplied from battery or ignition.
Pin EN provides pull-down resistor to force the transceiver into sleep mode if EN is
disconnected.
Pin RXD is set floating if V
BAT is disconnected.
Pin TXD provides a pull-down resistor to provide a static low if TXD is disconnected.
The LIN output driver has a current limitation and if the junction temperature T
j exceeds the
thermal shut-down temperature T
off the output driver switches off.
The implemented hysteresis T
hys enables the LIN output again after the temperature has
been decreased.
3.15
Physical Layer Compatibility
Since the LIN physical layer is independent from higher LIN layers (e.g. LIN protocol layer), all
nodes with a LIN physical layer according to this revision can be mixed with LIN physical layer
nodes, which are according to older versions (i.e. LIN 1.0, LIN 1.1, LIN 1.2, LIN 1.3), without any
restrictions. A higher ratio of nodes according to this LIN physical layer specification or the one
of revision 2.0 will result in a higher transmission reliability.
a: V
S > 5V
b: V
S < 4V
c: Bus wake-up event
d: Wake-up from Wake switch
EN = 1
EN = 0
Unpowered Mode
V
Batt = 0V
Normal Mode
INH: high (INH HS switch ON)
Communication: ON
Sleep Mode
INH: high impedance (INH HS switch OFF)
Communication: OFF
Pre-normal Mode
INH: high (INH internal High Side switch ON)
Communication: OFF
a
b
c
d
b
Local wake-up event
Go to sleep command
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