參數(shù)資料
型號(hào)： ATF-33143-TR1
元件分類： 小信號(hào)晶體管
英文描述： X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： PLASTIC, SC-70, 4 PIN
文件頁(yè)數(shù)： 16/18頁(yè)
文件大?。?/td> 154K
代理商： ATF-33143-TR1
7
Notes:
1. Measurements made on ATN LP1 power load pull system.
2. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on
frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in higher P1dB
and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing.
3. PAE (%) = ((Pout – Pin) / Pdc) X 100
4. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
ATF-33143 Power Parameters Tuned for Max P1dB, VDS = 4 V, IDSQ = 80 mA
Freq
P1dB
Id
G1dB
PAE1dB
P3dB
Id
PAE3dB
G Out_mag
G Out_ang
(GHz)
(dBm)
(mA)
(dB)
(%)
(dBm)
(mA)
(%)
(Mag.)
(
°)
0.9
20.7
89
23.2
33
23.2
102
51
0.39
160
1.5
21.2
91
20.7
36
23.8
116
51
0.43
165
1.8
21.1
80
19.2
40
23.0
94
52
0.43
170
2.0
21.6
81
18.1
44
23.2
89
57
0.42
174
4.0
23.0
97
11.9
48
24.6
135
48
0.40
-150
6.0
24.0
130
5.9
36
25.2
136
36
0.37
-124
Pin (dBm)
Figure 20. Swept Power Tuned for
Max P1dB
VDS =4V, IDSQ = 80 mA, 2 GHz.
P
out
(dBm),
G
(dB),
PAE
(%)
70
60
50
40
30
20
10
0
-10
-20
-40
-30
-10
-20
10
20
0
Pout
Gain
PAE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-33143-TR1G 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-33143-TR2 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-33143-TR2G 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF331M4 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package
ATF-331M4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHEMT Low Noise +31 dBm OIP3 in MiniPak
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