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參數(shù)資料
| 型號： | ATF-34143-TR1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 11/15頁 |
| 文件大?。?/td> | 273K |
| 代理商： | ATF-34143-TR1 |
5
ATF-34143 Typical Performance Curves, continued
Note:
1. P1dBmeasurementsareperformedwithpassivebiasing.Quicescentdraincurrent,IDSQ,issetwithzeroRFdriveapplied.AsP1dBisapproached,
thedraincurrentmayincreaseordecreasedependingonfrequencyanddcbiaspoint.AtlowervaluesofIDSQthedeviceisrunningclosertoclass
BaspoweroutputapproachesP1dB.ThisresultsinhigherPAE(poweraddedefficiency)whencomparedtoadevicethatisdrivenbyaconstant
currentsourceasistypicallydonewithactivebiasing.Asanexample,ataVDS=4VandIDSQ=10mA,Idincreasesto62mAasaP1dBof+19dBm
isapproached.
Figure 19. P1dB vs. IDS Active Bias Tuned for min NF @
4V, 60 mA at 900 MHz.
FREQUENCY (MHz)
Figure 15. P1dB, IP3 vs. Frequencyand Temperature at VDS
=4V,IDS=60 mA.[1]
P1
dB
,O
IP
3(
dB
m
)
0
2000
4000
6000
8000
33
31
29
27
25
23
21
19
17
85 C
25 C
-40 C
OIP3
P1dB
IDSQ (mA)
Figure 16. NF, Gain, OP1dB and OIP3 vs. IDS at 4 V and
3.9 GHz Tuned for Noise Figure.[1]
GA
IN
(d
B)
,O
P1
dB
,a
nd
OI
P3
(d
Bm
)
NO
IS
EF
IG
UR
E(
dB
)
0
40
20
80
100
120
60
140
Gain
OP1dB
OIP3
NF
35
30
25
20
15
10
5
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
IDSQ (mA)
Figure 17. NF, Gain, OP1dB and OIP3 vs. IDS at 4 V and
5.8 GHz Tuned for Noise Figure.[1]
GA
IN
(d
B)
,O
P1
dB
,a
nd
OI
P3
(d
Bm
)
NO
IS
EF
IG
UR
E(
dB
)
0
40
20
80
100
120
60
Gain
OP1dB
OIP3
NF
30
27
24
21
18
15
12
9
6
3
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequencyand Temperature
at VDS=4V,IDS=60 mA.
G a
(d
B)
0
2000
4000
6000
8000
25
20
15
10
NF
(d
B)
1.5
1.0
0.5
0
85 C
25 C
-40 C
IDS (mA)
Figure 18. P1dB vs. IDS Active Bias Tuned for NF @ 4V, 60
mA at 2 GHz.
P 1
dB
(d
Bm
)
0
100
50
150
25
20
15
10
5
0
-5
3 V
4 V
IDS (mA)
P 1
dB
(d
Bm
)
0
100
50
150
25
20
15
10
5
0
-5
3 V
4 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-34143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF34143TR2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
| ATF-34143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-34143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF35076 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
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