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參數(shù)資料
| 型號： | ATF-34143-TR1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SOT-343, 4 PIN |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 97K |
| 代理商： | ATF-34143-TR1 |
2
ATF-34143 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum
VDS
Drain - Source Voltage[2]
V
5.5
VGS
Gate - Source Voltage[2]
V-5
VGD
Gate Drain Voltage[2]
V-5
ID
Drain Current[2]
mA
Idss[3]
Pdiss
Total Power Dissipation [4]
mW
725
Pin max
RF Input Power
dBm
17
TCH
Channel Temperature
°C
160
TSTG
Storage Temperature
°C
-65 to 160
θ
jc
Thermal Resistance[5]
°C/W
165
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. Assumes DC quiescent conditions.
3. VGS = 0 volts.
4. Source lead temperature is 25
°C.
Derate 6 mW/
°C for T
L > 40°C.
5. Thermal resistance measured using
150
°C Liquid Crystal Measurement
method.
6. Under large signal conditions, VGS may
swing positive and the drain current
may exceed Idss. These conditions are
acceptable as long as the maximum
Pdiss and Pin max ratings are not
exceeded.
Product Consistency Distribution Charts [7]
VDS (V)
Figure 1. Typical/Pulsed I-V Curves[6].
(VGS = -0.2 V per step)
I DS
(mA)
02
4
6
8
250
200
150
100
50
0
+0.6 V
0 V
–0.6 V
OIP3 (dBm)
Figure 2. OIP3 @ 2 GHz, 4 V, 60 mA.
LSL=29.0, Nominal=31.8, USL=35.0
29
31
30
33
34
32
35
120
100
80
60
40
20
0
-3 Std
+3 Std
Cpk = 1.37245
Std = 0.66
9 Wafers
Sample Size = 450
NF (dB)
Figure 3. NF @ 2 GHz, 4 V, 60 mA.
LSL=0.1, Nominal=0.47, USL=0.8
0
0.4
0.2
0.6
0.8
120
100
80
60
40
20
0
-3 Std
+3 Std
Cpk = 2.69167
Std = 0.04
9 Wafers
Sample Size = 450
GAIN (dB)
Figure 4. Gain @ 2 GHz, 4 V, 60 mA.
LSL=16.0, Nominal=17.5, USL=19.0
16
17
16.5
18
18.5
17.5
19
120
100
80
60
40
20
0
-3 Std
+3 Std
Cpk = 2.99973
Std = 0.15
9 Wafers
Sample Size = 450
Notes:
7. Distribution data sample size is 450
samples taken from 9 different wafers.
Future wafers allocated to this product
may have nominal values anywhere
within the upper and lower spec limits.
8. Measurements made on production
test board. This circuit represents a
trade-off between an optimal noise
match and a realizeable match based
on production test requirements.
Circuit losses have been de-embedded
from actual measurements.
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| ATF-35143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR2G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-34143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF34143TR2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
| ATF-34143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-34143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF35076 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
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