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參數(shù)資料
| 型號(hào)： | ATF-34143-TR1G |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 10/15頁 |
| 文件大?。?/td> | 258K |
| 代理商： | ATF-34143-TR1G |
4
ATF-34143 Typical Performance Curves
Notes:
1. Measurements made on a fixed toned production test board that was tuned for optimal gain match with reasonable noise figure at 4V, 60 mA
bias. This circuit represents a trade-off between optimal noise match, maximum gain match, and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached,
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class
B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm
is approached.
IDSQ (mA)
Figure 6. OIP3 and P1dB vs. IDSand VDS Tuned for NF @
4 V, 60 mA at 2 GHz.[1,2]
OI
P3
,P
1d
B
(d
Bm
)
0
40
20
80
120
100
60
140
35
30
25
20
15
10
5
0
OIP3
3 V
4 V
P1dB
IDSQ (mA)
Figure 9. OIP3 and P1dB vs. IDSand VDS Tuned for NF @
4V, 60 mA at 900 MHz.[1,2]
OI
P3
,P
1d
B
(d
Bm
)
0
40
20
80
100
60
120
35
30
25
20
15
10
5
0
OIP3
3 V
4 V
P1dB
CURRENT (mA)
Figure 8. Noise Figure vs. Current (Id)and Voltage
(VDS) at 2 GHz.[1,2]
NO
IS
EF
IG
UR
E(
dB
)
0
40
20
80
100
60
120
1
0.8
0.6
0.4
0.2
0
3 V
4 V
CURRENT (mA)
Figure 11. Noise Figure vs. Current (Id)and Voltage
(VDS) at 900 MHz.[1,2]
NO
IS
EF
IG
UR
E(
dB
)
0
40
20
80
100
60
120
3 V
4 V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
CURRENT (mA)
Figure 7. Associated Gain vs. Current (Id)and Voltage
(VD) at 2 GHz.[1,2]
AS
SO
CI
AT
ED
GA
IN
(d
B)
0
40
20
80
100
60
120
3 V
4 V
20
15
10
5
0
CURRENT (mA)
Figure 10. Associated Gain vs. Current (Id)and Voltage
(VD) at 900 MHz.[1,2]
AS
SO
CI
AT
ED
GA
IN
(d
B)
0
40
20
80
100
60
120
3 V
4 V
25
20
15
10
5
0
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequencyand Current at 4V.
Fm
in
(d
B)
0
4.0
2.0
6.0
60 mA
40 mA
20 mA
1.2
1.0
0.8
0.6
0.4
0.2
0
FREQUENCY (GHz)
Figure 13. Associated Gain vs. Frequencyand Current
at 4V.
G a
(d
B)
0
2.0
1.0
4.0
5.0
3.0
6.0
25
20
15
10
5
60 mA
40 mA
20 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-34143-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF34143TR2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
| ATF-34143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-34143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF35076 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
| ATF35143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
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