參數(shù)資料
型號： ATF-35143-BLK
元件分類： 小信號晶體管
英文描述： X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： PLASTIC, SC-70, 4 PIN
文件頁數(shù)： 17/19頁
文件大?。?/td> 160K
代理商： ATF-35143-BLK
7
A
TF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 10 mA
Freq.
Fmin
Γ
opt
Rn/50
Ga
GHz
dB
Mag.
Ang.
-
dB
0.5
0.10
0.88
5.0
0.15
20.5
0.9
0.11
0.84
14.0
0.15
19.0
1.0
0.12
0.83
16.0
0.15
18.6
1.5
0.17
0.77
26.0
0.15
17.5
1.8
0.20
0.74
31.9
0.15
16.9
2.0
0.23
0.71
37.3
0.14
16.4
2.5
0.29
0.66
48.6
0.14
15.7
3.0
0.34
0.60
60.6
0.12
15.0
4.0
0.46
0.52
86.8
0.12
13.6
5.0
0.58
0.45
115.3
0.08
12.4
6.0
0.69
0.40
145.8
0.05
11.3
7.0
0.81
0.37
177.7
0.05
10.3
8.0
0.92
0.35
-149.3
0.07
9.5
9.0
1.04
0.35
-115.6
0.12
8.8
10.0
1.16
0.37
-81.8
0.22
8.3
FREQUENCY (GHz)
Figure 19. MSG/MAG and |S21|2 vs.
Frequency at 2 V, 10 mA.
MSG/MAG
and
S
21
(dB)
020
510
15
MSG
MAG
S21
30
25
20
15
10
5
0
-5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at sixteen different impedances using an ATN NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
ATF-35143 Typical Scattering Parameters, V
DS = 2 V, IDS = 10 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.50
0.99
-18.75
15.89
6.23
164.76
-32.40
0.024
77.63
0.63
-14.09
24.14
0.75
0.97
-29.11
15.79
6.16
155.98
-28.87
0.036
70.58
0.61
-19.69
22.30
1.00
0.95
-38.28
15.61
6.03
148.42
-26.56
0.047
64.88
0.60
-26.10
21.08
1.50
0.91
-55.52
15.17
5.73
133.92
-23.61
0.066
54.16
0.57
-38.73
19.39
1.75
0.89
-63.78
14.92
5.57
127.01
-22.62
0.074
49.11
0.56
-44.79
18.75
2.00
0.86
-71.82
14.65
5.40
120.27
-21.72
0.082
44.08
0.54
-50.70
18.19
2.50
0.81
-87.59
14.11
5.08
107.36
-20.35
0.096
34.60
0.51
-61.95
17.23
3.00
0.76
-103.22
13.54
4.76
95.04
-19.41
0.107
25.71
0.47
-72.47
16.48
4.00
0.66
-134.81
12.40
4.17
71.95
-18.27
0.122
9.04
0.41
-91.47
15.34
5.00
0.61
-165.34
11.29
3.67
50.43
-17.65
0.131
-5.97
0.34
-110.05
14.47
6.00
0.58
165.88
10.27
3.26
30.28
-17.33
0.136
-20.15
0.27
-129.24
13.80
7.00
0.57
137.00
9.27
2.91
10.68
-17.14
0.139
-33.84
0.21
-150.49
13.21
8.00
0.58
110.78
8.33
2.61
-8.09
-17.14
0.139
-45.60
0.17
-174.77
12.73
9.00
0.61
86.75
7.32
2.32
-26.38
-17.20
0.138
-57.65
0.13
154.01
10.69
10.00
0.65
66.25
6.44
2.10
-43.90
-17.20
0.138
-68.22
0.11
118.18
9.85
11.00
0.69
46.88
5.54
1.89
-61.97
-17.27
0.137
-79.30
0.14
78.36
9.16
12.00
0.72
27.76
4.56
1.69
-79.90
-17.39
0.135
-90.87
0.19
49.57
8.34
13.00
0.74
8.62
3.45
1.49
-97.18
-17.79
0.129
-102.19
0.26
29.95
7.35
14.00
0.77
-5.28
2.33
1.31
-112.92
-18.20
0.123
-110.80
0.33
9.45
6.51
15.00
0.82
-16.03
1.29
1.16
-128.66
-18.56
0.118
-120.09
0.39
-7.98
6.51
16.00
0.82
-28.32
0.19
1.02
-144.87
-18.79
0.115
-129.92
0.45
-22.30
5.48
17.00
0.84
-40.43
-0.87
0.91
-159.49
-18.79
0.115
-139.60
0.51
-32.23
5.24
18.00
0.86
-56.14
-1.99
0.80
-175.19
-19.33
0.108
-149.17
0.57
-44.43
4.72
相關(guān)PDF資料
PDF描述
ATF-35143-TR2 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-35143-TR2 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-35143-TR1 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-35143-BLK X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-36163-BLKG KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-35143-BLKG 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-35143-TR1 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-35143-TR1G 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-35143-TR2 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-35143-TR2G 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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