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參數(shù)資料
| 型號： | ATF-35143-TR1G |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 15/19頁 |
| 文件大?。?/td> | 608K |
| 代理商： | ATF-35143-TR1G |
5
ATF-35143 Typical Performance Curves, continued
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 2 V 15mA bias. This circuit represents a trade-off between
optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been de-
embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the
drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq the device is running closer to class B as
power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a
constant current source as is typically done with active biasing. As an example, at a VDS = 4V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15
dBm is approached.
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and Current at 2V.
F
mi
n(dB)
0
10
1.50
1.25
1.00
0.75
0.50
0.25
0
4
2
8
6
5 mA
15 mA
30 mA
FREQUENCY (GHz)
Figure 13. Associated Gain vs.
Frequency and Current at 2V.
F
mi
n(dB)
0
10
25
20
15
10
5
4
2
8
6
5 mA
15 mA
30 mA
FREQUENCY (GHz)
Figure 14. Fmin andGavs. Frequency and
Temperature, VDS=2V, IDS=15 mA.
G
a(dB)
0
8
2
4
6
25C
-40C
85C
22
20
18
16
14
12
IDS (mA)
Figure 16. OIP3, P1dB, NF andGainvs. Bias[1]
(Active Bias, 2V, 3.9 GHz).
OIP3,
P
1d
B
(dBm),
Gain
(dB)
0
80
20
40
60
P1dB
OIP3
Gain
NF
25
20
15
10
5
0
NF
(dB)
2.5
2
1.5
1
0.5
0
NF
(dB)
1.0
0.8
0.6
0.4
0.2
0
IDS (mA)
Figure 17. OIP3, P1dB, NF andGainvs. Bias[1]
(Active Bias, 2V, 5.8 GHz).
OIP3,
P
1d
B
(dBm),
Gain
(dB)
0
80
20
40
60
P1dB
OIP3
Gain
NF
25
20
15
10
5
0
-5
NF
(dB)
3
2.5
2
1.5
1
0.5
0
FREQUENCY (GHz)
Figure 15. OIP3 andP1dBvs. Frequency and
Temperature[1,2], VDS=2V, IDS=15mA.
OIP3,
P
1d
B
(dBm)
0
8
2
4
6
25C
-40C
85C
25
20
15
10
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-35143-TR2G | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-35143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-35143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF35176 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
| ATF35376 | 制造商:AVANTEK 功能描述:JFET Transistor, N-Channel |
| ATF35576 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 20MA I(DSS) | MICRO-XVAR |
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