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參數(shù)資料
| 型號： | ATF-35143-TR2G |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 14/19頁 |
| 文件大?。?/td> | 170K |
| 代理商： | ATF-35143-TR2G |
4
ATF-35143 Typical Performance Curves
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2 V
15 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device
is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency)
when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS
= 4 V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is approached.
IDSQ (mA)
Figure 6. OIP3 and P1dB vs. Bias at
2 GHz.[1,2]
OIP3,
P
1dB
(dBm)
060
30
25
20
15
10
5
0
20
10
40
50
30
2 V
3 V
4 V
OIP3
P1dB
IDSQ (mA)
Figure 7. OIP3 and P1dB vs. Bias at
900 MHz.[1,2]
OIP3,
P
1dB
(dBm)
060
20
10
40
50
30
2 V
3 V
4 V
OIP3
P1dB
30
25
20
15
10
5
IDSQ (mA)
Figure 8. NF and Ga vs. Bias at 2 GHz.[1]
G
a
(dB)
060
20
10
40
50
30
2 V
3 V
4 V
Ga
NF
20
19
18
17
16
15
NF
(dB)
2.5
2
1.5
1
0.5
0
IDSQ (mA)
Figure 9. NF and Ga vs. Bias at
900 MHz.[1]
G
a
(dB)
060
20
10
40
50
30
2 V
3 V
4 V
Ga
NF
24
22
20
18
16
14
NF
(dB)
2.5
2
1.5
1
0.5
0
IDS (mA)
Figure 10. P1dB vs. Bias (Active Bias)
Tuned for NF @ 2 V, 15 mA at 2 GHz.[1]
P
1dB
(dBm)
080
25
20
15
10
5
0
-5
20
40
60
2 V
3 V
4 V
IDS (mA)
Figure 11. P1dB vs. Bias (Active Bias)
Tuned for NF @ 2 V, 15 mA at 900 MHz.[1]
P
1dB
(dBm)
080
20
40
60
2 V
3 V
4 V
20
15
10
5
0
-5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-35143-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLKG | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR1G | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR2G | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF35176 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
| ATF35376 | 制造商:AVANTEK 功能描述:JFET Transistor, N-Channel |
| ATF35576 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 20MA I(DSS) | MICRO-XVAR |
| ATF36077 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Ultra Low Noise Pseudomorphic HEMT |
| ATF-36077 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Ultra Low Noise Pseudomorphic HEMT |
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