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參數(shù)資料
| 型號(hào)： | ATF-38143-TR2 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 13/13頁 |
| 文件大?。?/td> | 132K |
| 代理商： | ATF-38143-TR2 |
9
Noise Parameter
Applications Information
Fmin values at 2 GHz and higher
are based on measurements while
the Fmins below 2 GHz have been
extrapolated. The Fmin values are
based on a set of 16 noise figure
measurements made at 16
different impedances using an
ATN NP5 test system. From these
measurements, a true Fmin is
calculated. Fmin represents the
true minimum noise figure of the
device when the device is pre-
sented with an impedance
matching network that trans-
forms the source impedance,
typically 50
, to an impedance
represented by the reflection
coefficient
Γ
o. The designer must
design a matching network that
will present
Γ
o to the device with
minimal associated circuit losses.
The noise figure of the completed
amplifier is equal to the noise
losses of the matching network
preceding the device. The noise
figure of the device is equal to
Fmin only when the device is
presented with
Γo. If the reflec-
tion coefficient of the matching
network is other than
Γo, then the
noise figure of the device will be
greater than Fmin based on the
following equation.
NF = Fmin + 4 Rn
|
Γs – Γo | 2
Zo
(|1 +
Γo|2)(1 –Γs|2)
Where Rn/Zo is the normalized
noise resistance,
Γ
o is the opti-
mum reflection coefficient
required to produce Fmin and Γs is
the reflection coefficient of the
source impedance actually
presented to the device. The
losses of the matching networks
are non-zero and they will also
add to the noise figure of the
device creating a higher amplifier
noise figure. The losses of the
matching networks are related to
the Q of the components and
associated printed circuit board
loss.
Γ
o is typically fairly low at
higher frequencies and increases
as frequency is lowered. Larger
gate width devices will typically
have a lower
Γ
o as compared to
narrower gate width devices.
Typically for FETs, the higher
Γo
usually infers that an impedance
much higher than 50
is required
for the device to produce Fmin. At
VHF frequencies and even lower
L Band frequencies, the required
impedance can be in the vicinity
of several thousand ohms.
Matching to such a high imped-
ance requires very hi-Q compo-
nents in order to minimize circuit
losses. As an example at 900 MHz,
when air-wound coils (Q > 100)
are used for matching networks,
the loss can still be up to 0.25 dB
which will add directly to the
noise figure of the device. Using
muilti-layer molded inductors
with Qs in the 30 to 50 range
results in additional loss over the
air-wound coil. Losses as high as
0.5 dB or greater add to the
typical 0.15 dB Fmin of the device
creating an amplifier noise figure
of nearly 0.65 dB. A discussion
concerning calculated and
measured circuit losses and their
effect on amplifier noise figure is
covered in Agilent Application
1085.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-38143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF4 | 功能描述:TERM BLOCK DIN RAIL 8MM GRAY RoHS:是 類別:連接器，互連式 >> 接線座 - Din 軌道，通道 系列:ATF 標(biāo)準(zhǔn)包裝:1 系列:CLIPLINE UK 類型:斷連 斷開類型:保險(xiǎn)絲，桿 位置數(shù):3 級(jí)別數(shù)目:1 端子 - 寬度:18.0mm 端接類型:螺釘 電流 - IEC:32A 電壓 - IEC:690V 電流 - UL:30A 電壓 - UL:600V 線規(guī)或范圍 - AWG:3-18 AWG 線規(guī)或范圍 - mm²:1.5-25mm² 特點(diǎn):- 顏色:黑 保險(xiǎn)絲類型:小型，10.3mm x 38mm 材料 - 絕緣體:聚酰胺（PA），尼龍 材料可燃性額定值:UL94 V-0 剝線長度:12mm 其它名稱:UK 10.3-HESI N 3POLUK10.3-HESIN3POL |
| ATF-44101 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-8 GHz Medium Power Gallium Arsenide FET |
| ATF-45101 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-8 GHz Medium Power Gallium Arsenide FET |
| ATF-45171 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-8 GHz Medium Power Gallium Arsenide FET |
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