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參數(shù)資料
| 型號： | ATF-38143-TR2 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 13/13頁 |
| 文件大?。?/td> | 126K |
| 代理商： | ATF-38143-TR2 |
9
Noise Parameter Applications Information
Fmin values at 2 GHz and higher are based on measure-
ments while the Fmins below 2 GHz have been extrapo-
lated. The Fmin values are based on a set of 16 noise
figure measurements made at 16 different impedances
using an ATN NP5 test system. From these measure-
ments, a true Fmin is calculated. Fmin represents the
true minimum noise figure of the device when the
device is presented with an impedance matching net-
work that transforms the source impedance, typically
50
, to an impedance represented by the reflection
coefficient
Γo. The designer must design a matching
network that will present
Γo to the device with minimal
associated circuit losses. The noise figure of the com-
pleted amplifier is equal to the noise figure of the device
plus the losses of the matching network preceding the
device. The noise figure of the device is equal to Fmin
only when the device is presented with
Γo. If the
reflection coefficient of the matching network is other
than
Γo, then the noise figure of the device will be
greater than Fmin based on the following equation.
NF = Fmin + 4 Rn
|
Γs – Γo | 2
Zo
(|1 +
Γo|2)(1 –Γs|2)
Where Rn/Zo is the normalized noise resistance, Γo is
the optimum reflection coefficient required to produce
Fmin and Γs is the reflection coefficient of the source
impedance actually presented to the device. The losses
of the matching networks are non-zero and they will
also add to the noise figure of the device creating a
higher amplifier noise figure. The losses of the match-
ing networks are related to the Q of the components
and associated printed circuit board loss.
Γo is typically
fairly low at higher frequencies and increases as fre-
quency is lowered. Larger gate width devices will typi-
cally have a lower
Γo as compared to narrower gate
width devices.
Typically for FETs, the higher
Γo usually infers that an
impedance much higher than 50
is required for the
device to produce Fmin. At VHF frequencies and even
lower L Band frequencies, the required impedance can
be in the vicinity of several thousand ohms. Matching to
such a high impedance requires very hi-Q components
in order to minimize circuit losses. As an example at
900 MHz, when air-wound coils (Q > 100) are used for
matching networks, the loss can still be up to 0.25 dB
which will add directly to the noise figure of the device.
Using muilti-layer molded inductors with Qs in the 30 to
50 range results in additional loss over the air-wound
coil. Losses as high as 0.5 dB or greater add to the
typical 0.15 dB Fmin of the device creating an amplifier
noise figure of nearly 0.65 dB. A discussion concerning
calculated and measured circuit losses and their effect
on amplifier noise figure is covered in Avago Applica-
tion 1085.
相關(guān)PDF資料 |
PDF描述 |
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| ATF-38143-TR1 | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR2 | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-BLK | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR2G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-BLKG | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-38143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF4 | 功能描述:TERM BLOCK DIN RAIL 8MM GRAY RoHS:是 類別:連接器，互連式 >> 接線座 - Din 軌道，通道 系列:ATF 標(biāo)準包裝:1 系列:CLIPLINE UK 類型:斷連 斷開類型:保險絲，桿 位置數(shù):3 級別數(shù)目:1 端子 - 寬度:18.0mm 端接類型:螺釘 電流 - IEC:32A 電壓 - IEC:690V 電流 - UL:30A 電壓 - UL:600V 線規(guī)或范圍 - AWG:3-18 AWG 線規(guī)或范圍 - mm²:1.5-25mm² 特點:- 顏色:黑 保險絲類型:小型，10.3mm x 38mm 材料 - 絕緣體:聚酰胺（PA），尼龍 材料可燃性額定值:UL94 V-0 剝線長度:12mm 其它名稱:UK 10.3-HESI N 3POLUK10.3-HESIN3POL |
| ATF-44101 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-8 GHz Medium Power Gallium Arsenide FET |
| ATF-45101 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-8 GHz Medium Power Gallium Arsenide FET |
| ATF-45171 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-8 GHz Medium Power Gallium Arsenide FET |
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