參數(shù)資料
型號(hào): ATF-38143-TR2G
元件分類(lèi): 小信號(hào)晶體管
英文描述: X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝: LEAD FREE, PLASTIC, SC-70, 4 PIN
文件頁(yè)數(shù): 8/13頁(yè)
文件大小: 452K
代理商: ATF-38143-TR2G
4
ATF-38143 Typical Performance Curves
Notes:
1. Measurementsmadeonafixedtunedproductiontestboardthatwastunedforoptimalgainmatchwithreasonablenoisefigureat2V10mA
bias.Thiscircuitrepresentsatrade-offbetweenanoptimalnoisematch,maximumgainmatchandarealizablematchbasedonproductiontest
boardrequirements.Circuitlosseshavebeende-embeddedfromactualmeasurements.
2. P1dBmeasurementsareperformedwithpassivebiasing.Quiescentdraincurrent,IDSQ,issetwithzeroRFdriveapplied.AsP1dBisapproached,the
draincurrentmayincreaseordecreasedependingonfrequencyanddcbiaspoint.AtlowervaluesofIDSQthedeviceisrunningclosertoclassB
aspoweroutputapproachesP1dB.ThisresultsinhigherP1dBandhigherPAE(poweraddedefficiency)whencomparedtoadevicethatisdriven
byaconstantcurrentsourceasistypicallydonewithactivebiasing.
CURRENT, IDS (mA)
Figure 6. OIP3 and P1dB vs. Id at 2V, 2 GHz.
OIP3,
P
1d
B
(dBm)
0
60
30
25
20
15
10
5
0
20
10
40
50
30
OIP3
P1dB
CURRENT, IDS (mA)
Figure 7. OIP3 and P1dB vs. Id at 2V, 900 MHz.
OIP3,
P
1d
B
(dBm)
0
60
30
25
20
15
10
5
0
20
10
40
50
30
CURRENT, IDS (mA)
Figure 8. Noise Figure vs. Id at 2V, 2 GHz.
NOISE
FIGURE
(dB)
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
60
20
10
40
50
30
0
CURRENT, IDS (mA)
Figure 9. Noise Figure vs. Id at 2V, 900 MHz.
NOISE
FIGURE
(dB)
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
60
20
10
40
50
30
0
CURRENT, IDS (mA)
Figure 10. Associated Gain vs. Id at 2V, 2 GHz.
ASSOCIATED
GAIN
(dB)
0
22
21
20
19
18
17
16
60
20
10
40
50
30
15
OIP3
P1dB
CURRENT, IDS (mA)
Figure 11. Associated Gain vs. Id at 2V, 900 MHz.
ASSOCIATED
GAIN
(dB)
0
22
21
20
19
18
17
16
60
20
10
40
50
30
15
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