• <li id="btex2"><nobr id="btex2"><sub id="btex2"></sub></nobr></li>
      參數(shù)資料
      型號: ATTINY13-20SSQ
      廠商: Atmel
      文件頁數(shù): 9/22頁
      文件大小: 0K
      描述: MCU AVR 1KB FLASH 20MHZ 8SOIC GW
      產(chǎn)品培訓(xùn)模塊: MCU Product Line Introduction
      tinyAVR Introduction
      標(biāo)準(zhǔn)包裝: 100
      系列: AVR® ATtiny
      核心處理器: AVR
      芯體尺寸: 8-位
      速度: 20MHz
      外圍設(shè)備: 欠壓檢測/復(fù)位,POR,PWM,WDT
      輸入/輸出數(shù): 6
      程序存儲器容量: 1KB(512 x 16)
      程序存儲器類型: 閃存
      EEPROM 大?。?/td> 64 x 8
      RAM 容量: 64 x 8
      電壓 - 電源 (Vcc/Vdd): 2.7 V ~ 5.5 V
      數(shù)據(jù)轉(zhuǎn)換器: A/D 4x10b
      振蕩器型: 內(nèi)部
      工作溫度: -40°C ~ 85°C
      封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
      包裝: 管件
      配用: ATAVRDRAGON-ND - KIT DRAGON FLASH MEM AVR
      17
      2535JS–AVR–08/10
      ATtiny13
      8. Errata
      The revision letter in this section refers to the revision of the ATtiny13 device.
      8.1
      ATtiny13 Rev. D
      EEPROM can not be written below 1.9 Volt
      1. EEPROM can not be written below 1.9 Volt
      Writing the EEPROM at VCC below 1.9 volts might fail.
      Problem Fix/Workaround
      Do not write the EEPROM when VCC is below 1.9 volts.
      8.2
      ATtiny13 Rev. C
      Revision C has not been sampled.
      8.3
      ATtiny13 Rev. B
      Wrong values read after Erase Only operation
      High Voltage Serial Programming Flash, EEPROM, Fuse and Lock Bits may fail
      Device may lock for further programming
      debugWIRE communication not blocked by lock-bits
      Watchdog Timer Interrupt disabled
      EEPROM can not be written below 1.9 Volt
      8.3.1
      Wrong values read after Erase Only operation
      At supply voltages below 2.7 V, an EEPROM location that is erased by the Erase Only oper-
      ation may read as programmed (0x00).
      Problem Fix/Workaround
      If it is necessary to read an EEPROM location after Erase Only, use an Atomic Write opera-
      tion with 0xFF as data in order to erase a location. In any case, the Write Only operation can
      be used as intended. Thus no special considerations are needed as long as the erased loca-
      tion is not read before it is programmed.
      8.3.2
      High Voltage Serial Programming Flash, EEPROM, Fuse and Lock Bits may fail
      Writing to any of these locations and bits may in some occasions fail.
      Problem Fix/Workaround
      After a writing has been initiated, always observe the RDY/BSY signal. If the writing should
      fail, rewrite until the RDY/BSY verifies a correct writing. This will be fixed in revision D.
      8.3.3
      Device may lock for further programming
      Special combinations of fuse bits will lock the device for further programming effectively
      turning it into an OTP device. The following combinations of settings/fuse bits will cause this
      effect:
      – 128 kHz internal oscillator (CKSEL[1..0] = 11), shortest start-up time
      (SUT[1..0] = 00), Debugwire enabled (DWEN = 0) or Reset disabled RSTDISBL = 0.
      – 9.6 MHz internal oscillator (CKSEL[1..0] = 10), shortest start-up time
      (SUT[1..0] = 00), Debugwire enabled (DWEN = 0) or Reset disabled RSTDISBL = 0.
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