參數(shù)資料
型號(hào)： ATTINY13A-SHR
廠(chǎng)商： Atmel
文件頁(yè)數(shù)： 35/67頁(yè)
文件大?。?/td> 0K
描述： MCU AVR 1KB FLASH 20MHZ 8SOIC
產(chǎn)品培訓(xùn)模塊： MCU Product Line Introduction
tinyAVR Introduction
標(biāo)準(zhǔn)包裝： 1
系列： AVR® ATtiny
核心處理器： AVR
芯體尺寸： 8-位
速度： 20MHz
外圍設(shè)備： 欠壓檢測(cè)/復(fù)位，POR，PWM，WDT
輸入/輸出數(shù)： 6
程序存儲(chǔ)器容量： 1KB（512 x 16）
程序存儲(chǔ)器類(lèi)型： 閃存
EEPROM 大?。?/td> 64 x 8
RAM 容量： 64 x 8
電壓 - 電源 (Vcc/Vdd)： 1.8 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 4x10b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 8-SOIC（0.209"，5.30mm 寬）
包裝： 標(biāo)準(zhǔn)包裝
其它名稱(chēng)： ATTINY13A-SHRDKR
17
8126F–AVR–05/12
ATtiny13A
5.3.1
EEPROM Read/Write Access
The EEPROM Access Registers are accessible in the I/O space.
The write access times for the EEPROM are given in Table 5-1 on page 21. A self-timing func-
tion, however, lets the user software detect when the next byte can be written. If the user code
contains instructions that write the EEPROM, some precautions must be taken. In heavily fil-
tered power supplies, V
CC is likely to rise or fall slowly on Power-up/down. This causes the
device for some period of time to run at a voltage lower than specified as minimum for the clock
frequency used. See “Preventing EEPROM Corruption” on page 19 for details on how to avoid
problems in these situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
5.3.2
Atomic Byte Programming
Using Atomic Byte Programming is the simplest mode. When writing a byte to the EEPROM, the
user must write the address into the EEARL Register and data into EEDR Register. If the
EEPMn bits are zero, writing EEPE (within four cycles after EEMPE is written) will trigger the
erase/write operation. Both the erase and write cycle are done in one operation and the total
programming time is given in Table 5-1 on page 21. The EEPE bit remains set until the erase
and write operations are completed. While the device is busy with programming, it is not possi-
ble to do any other EEPROM operations.
5.3.3
Split Byte Programming
It is possible to split the erase and write cycle in two different operations. This may be useful if
the system requires short access time for some limited period of time (typically if the power sup-
ply voltage falls). In order to take advantage of this method, it is required that the locations to be
written have been erased before the write operation. But since the erase and write operations
are split, it is possible to do the erase operations when the system allows doing time-critical
operations (typically after Power-up).
5.3.4
Erase
To erase a byte, the address must be written to EEARL. If the EEPMn bits are 0b01, writing the
EEPE (within four cycles after EEMPE is written) will trigger the erase operation only (program-
ming time is given in Table 5-1 on page 21). The EEPE bit remains set until the erase operation
completes. While the device is busy programming, it is not possible to do any other EEPROM
operations.
5.3.5
Write
To write a location, the user must write the address into EEARL and the data into EEDR. If the
EEPMn bits are 0b10, writing the EEPE (within four cycles after EEMPE is written) will trigger
the write operation only (programming time is given in Table 5-1 on page 21). The EEPE bit
remains set until the write operation completes. If the location to be written has not been erased
before write, the data that is stored must be considered as lost. While the device is busy with
programming, it is not possible to do any other EEPROM operations.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATTINY13A-SN 功能描述:8位微控制器 -MCU 1KB FLASH 64B EE 64B SRAM 20MHz RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線(xiàn)寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
ATTINY13A-SNR 功能描述:8位微控制器 -MCU AVR 1KB FL 64B EE 64B SRAM 20MHz GRN RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線(xiàn)寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
ATTINY13A-SS7 功能描述:8位微控制器 -MCU AVR 1KB FLSH 64B EE 64B SRAM+105C NiPdAu RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線(xiàn)寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
ATTINY13A-SS7R 功能描述:8位微控制器 -MCU AVR 1KB FL 64B EE 64B SRAM JEDEC RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線(xiàn)寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
ATTINY13A-SSH 功能描述:8位微控制器 -MCU AVR 1KB, 64B EE 20MHz 64B SRAM RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線(xiàn)寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
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