參數(shù)資料
型號: ATTINY13V-10PU
廠商: Atmel
文件頁數(shù): 9/22頁
文件大?。?/td> 0K
描述: IC MCU AVR 1K FLASH 10MHZ 8DIP
產(chǎn)品培訓(xùn)模塊: MCU Product Line Introduction
tinyAVR Introduction
標(biāo)準(zhǔn)包裝: 50
系列: AVR® ATtiny
核心處理器: AVR
芯體尺寸: 8-位
速度: 10MHz
外圍設(shè)備: 欠壓檢測/復(fù)位,POR,PWM,WDT
輸入/輸出數(shù): 6
程序存儲器容量: 1KB(512 x 16)
程序存儲器類型: 閃存
EEPROM 大小: 64 x 8
RAM 容量: 64 x 8
電壓 - 電源 (Vcc/Vdd): 1.8 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 4x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 8-DIP(0.300",7.62mm)
包裝: 管件
產(chǎn)品目錄頁面: 612 (CN2011-ZH PDF)
配用: ATSTK600-RC02-ND - STK600 ROUTING CARD AVR
ATSTK600-ND - DEV KIT FOR AVR/AVR32
ATAVRDRAGON-ND - KIT DRAGON FLASH MEM AVR
ATAVRISP2-ND - PROGRAMMER AVR IN SYSTEM
ATJTAGICE2-ND - AVR ON-CHIP D-BUG SYSTEM
17
2535JS–AVR–08/10
ATtiny13
8. Errata
The revision letter in this section refers to the revision of the ATtiny13 device.
8.1
ATtiny13 Rev. D
EEPROM can not be written below 1.9 Volt
1. EEPROM can not be written below 1.9 Volt
Writing the EEPROM at VCC below 1.9 volts might fail.
Problem Fix/Workaround
Do not write the EEPROM when VCC is below 1.9 volts.
8.2
ATtiny13 Rev. C
Revision C has not been sampled.
8.3
ATtiny13 Rev. B
Wrong values read after Erase Only operation
High Voltage Serial Programming Flash, EEPROM, Fuse and Lock Bits may fail
Device may lock for further programming
debugWIRE communication not blocked by lock-bits
Watchdog Timer Interrupt disabled
EEPROM can not be written below 1.9 Volt
8.3.1
Wrong values read after Erase Only operation
At supply voltages below 2.7 V, an EEPROM location that is erased by the Erase Only oper-
ation may read as programmed (0x00).
Problem Fix/Workaround
If it is necessary to read an EEPROM location after Erase Only, use an Atomic Write opera-
tion with 0xFF as data in order to erase a location. In any case, the Write Only operation can
be used as intended. Thus no special considerations are needed as long as the erased loca-
tion is not read before it is programmed.
8.3.2
High Voltage Serial Programming Flash, EEPROM, Fuse and Lock Bits may fail
Writing to any of these locations and bits may in some occasions fail.
Problem Fix/Workaround
After a writing has been initiated, always observe the RDY/BSY signal. If the writing should
fail, rewrite until the RDY/BSY verifies a correct writing. This will be fixed in revision D.
8.3.3
Device may lock for further programming
Special combinations of fuse bits will lock the device for further programming effectively
turning it into an OTP device. The following combinations of settings/fuse bits will cause this
effect:
– 128 kHz internal oscillator (CKSEL[1..0] = 11), shortest start-up time
(SUT[1..0] = 00), Debugwire enabled (DWEN = 0) or Reset disabled RSTDISBL = 0.
– 9.6 MHz internal oscillator (CKSEL[1..0] = 10), shortest start-up time
(SUT[1..0] = 00), Debugwire enabled (DWEN = 0) or Reset disabled RSTDISBL = 0.
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ATTINY13V10SI 制造商:Atmel Corporation 功能描述:
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ATTINY13V-10SI SL735 制造商:Atmel Corporation 功能描述:MCU 8-bit ATtiny AVR RISC 1KB Flash 2.5V/3.3V/5V 8-Pin SOIC EIAJ T/R
ATTINY13V-10SJ 功能描述:IC MCU AVR 1K 5V 10MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器, 系列:AVR® ATtiny 標(biāo)準(zhǔn)包裝:9 系列:87C 核心處理器:8051 芯體尺寸:8-位 速度:40/20MHz 連通性:UART/USART 外圍設(shè)備:POR,WDT 輸入/輸出數(shù):32 程序存儲器容量:32KB(32K x 8) 程序存儲器類型:OTP EEPROM 大小:- RAM 容量:256 x 8 電壓 - 電源 (Vcc/Vdd):4.5 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:- 振蕩器型:內(nèi)部 工作溫度:0°C ~ 70°C 封裝/外殼:40-DIP(0.600",15.24mm) 包裝:管件
ATtiny13V-10SSI 功能描述:8位微控制器 -MCU AVR 1K FLASH 64B EE 64B SRAM ADC NRW RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT