參數(shù)資料
型號: ATTINY84A-CCU
廠商: Atmel
文件頁數(shù): 45/135頁
文件大?。?/td> 0K
描述: IC MCU 8BIT 8K FLASH 15UFBGA
標(biāo)準(zhǔn)包裝: 490
系列: AVR® ATtiny
核心處理器: AVR
芯體尺寸: 8-位
速度: 20MHz
連通性: USI
外圍設(shè)備: 欠壓檢測/復(fù)位,POR,PWM,溫度傳感器,WDT
輸入/輸出數(shù): 12
程序存儲器容量: 8KB(4K x 16)
程序存儲器類型: 閃存
EEPROM 大?。?/td> 512 x 8
RAM 容量: 512 x 8
電壓 - 電源 (Vcc/Vdd): 1.8 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 15-UFBGA
包裝: 托盤
16
8183F–AVR–06/12
ATtiny24A/44A/84A
When using register indirect addressing modes with automatic pre-decrement and post-incre-
ment, the address registers X, Y, and Z are decremented or incremented.
The 32 general purpose working registers, 64 I/O Registers, and the 128/256/512 bytes of inter-
nal data SRAM in the ATtiny24A/44A/84A are all accessible through all these addressing
modes. The Register File is described in “General Purpose Register File” on page 9.
Figure 5-2.
Data Memory Map
5.2.1
Data Memory Access Times
This section describes the general access timing concepts for internal memory access. The
internal data SRAM access is performed in two clk
CPU cycles as illustrated in Figure 5-3.
Figure 5-3.
On-chip Data SRAM Access Cycles
5.3
EEPROM Data Memory
The ATtiny24A/44A/84A contains 128/256/512 bytes of data EEPROM memory. It is organized
as a separate data space, in which single bytes can be read and written. The EEPROM has an
endurance of at least 100,000 write/erase cycles. The access between the EEPROM and the
CPU is described in the following, specifying the EEPROM Address Registers, the EEPROM
Data Register, and the EEPROM Control Register. For a detailed description of Serial data
downloading to the EEPROM, see “Serial Programming” on page 162.
32 Registers
64 I/O Registers
Internal SRAM
(128/256/512 x 8)
0x0000 - 0x001F
0x0020 - 0x005F
0x0DF/0x015F/0x025F
0x0060
Data Memory
clk
WR
RD
Data
Address
Address valid
T1
T2
T3
Compute Address
Read
Wr
ite
CPU
Memory Access Instruction
Next Instruction
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