參數(shù)資料
型號: ATTL7583BAJ-DT
廠商: ZARLINK SEMICONDUCTOR INC
元件分類: 通信及網(wǎng)絡(luò)
英文描述: SPECIALTY TELECOM CIRCUIT, PDSO28
封裝: PLASTIC, SOG-28
文件頁數(shù): 16/21頁
文件大?。?/td> 398K
代理商: ATTL7583BAJ-DT
4
Data Sheet
February 2001
L7583A/B/C/D Line Card Access Switch
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to elec-
trostatic discharge (ESD) during handling and mounting. Legerity employs a human-body model (HBM) and a charged-device
model (CDM) for ESD-susceptibility testing and protection design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used to define the model. No industry-wide standard has been adopted for CDM. However, a standard HBM
(resistance = 1500
, capacitance = 100 pF) is widely used and therefore can be used for comparison purposes. The HBM ESD
threshold presented here was obtained by using these circuit parameters.
Table 3. HBM ESD Threshold Voltage
Electrical Characteristics
TA = –40 °C to +85 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of
engineering evaluations. Typical values are for information purposes only and are not part of the testing requirements.
Table 4. Power Supply Specifications
*VBAT is used only as a reference for internal protection circuitry. If VBAT rises above –10 V, the device will enter an all OFF state and remain in this state
until the battery voltage drops below –15 V.
Table 5. Test In Switches, 1 and 2
* Applied voltage is 100 Vp-p square wave at 100 Hz.
Device
Rating
L7583
1000 V
Supply
Min
Typ
Max
Unit
Supply
Min
Typ
Max
Unit
VDD
4.5
5
5.5
V
VBAT*
–19
–72
V
Parameter
Test Condition
Measure
Min Typ Max Unit
OFF-state Leakage Current:
+25 °C
+85 °C
–40 °C
Vswitch (differential) = –320 V to Gnd
Vswitch (differential) = –60 V to +260 V
Vswitch (differential) = –330 V to Gnd
Vswitch (differential) = –60 V to +270 V
Vswitch (differential) = –310 V to Gnd
Vswitch (differential) = –60 V to +250 V
Iswitch
1
A
ON-resistance:
+25 °C
+85 °C
–40 °C
Iswitch (on) = ±5 mA, ±10 mA
VON
45
33
70
Isolation:
+25 °C
+85 °C
–40 °C
Vswitch (both poles) = ±320 V,
Logic inputs = Gnd
Vswitch (both poles) = ±330 V,
Logic inputs = Gnd
Vswitch (both poles) = ±310 V,
Logic inputs = Gnd
Iswitch
1
A
dV/dt Sensitivity*
——
200
V/s
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